Abstract
An AlGaAs/GaAs LED (light-emitting diode) with very small degradation is fabricated in an UCGAS (undercut GaAs on Si) structure for the first time. The 43 K photoluminescence data show that the stress in UCGAS annealed at 400°C is reduced to less than 1×108 dyn/cm2. The output power from the UCGAS LED under a constant current of 800 A/cm2 degrades to 94% of the original value in the first several hours and subsequently maintains constant output for more than 1000 hours. On the other hand, the output power emitted from the conventional mesa-type LED which contains residual stress of more than 109 dyn/cm2 degrades quickly.
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