Abstract
Dielectric SrTiO3 thin films have been prepared on Pt/SiO2/Si-wafer by means of a conventional rf-magnetron sputtering technique. Electric and dielectric properties of the films have been studied. It is demonstrated that the leakage current of the films is strongly dependent on the atmosphere during deposition. The SrTiO3 film 75 nm in thickness fabricated in pure O2 of 26.6 Pa at 600°C obtained the lowest leakage current density of 4.0×10-9 A/cm2 at 2 V. Analysis of the leakage current vs applied voltage characteristic indicated that the conduction in the higher electric field was due to the Pool-Frenkel emission.