Abstract
Dipivaloylmethane (DPM) metalorganic precursors, Pb(DPM)2, Zr(DPM)4 and Ti(OPri)2(DPM)2, are used as starting materials in the metalorganic chemical vapor deposition (MOCVD) method for the preparation of Pb(ZrxTi1-x)O3 (PZT) thin films. The films are deposited at the rate of 150 to 700 Å/min under atmospheric pressure and reduced pressure of 10∼30 Torr. The deposition rate is about ten times as high as that of the conventional sputtering method. The dielectric constant of the film (X=0.2) on a Pt/Si substrate is about 300 at room temperature. This value agrees with that of ceramic or sputtered films.