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Micromachining and Device Transplantation Using Focused Ion Beam

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Copyright (c) 1990 The Japan Society of Applied Physics
, , Citation Tohru Ishitani et al 1990 Jpn. J. Appl. Phys. 29 2283 DOI 10.1143/JJAP.29.2283

1347-4065/29/10R/2283

Abstract

During the past ten years, a number of focused ion beam (FIB) applications in microelectronics have been demonstrated and steadily identified. In this paper, we will review FIB micromachining and device transplantation, in which processes of FIB sputtering, redeposition, and/or FIB-assisted deposition are well utilized. The FIB 3-dimensional micromachining is demonstrated with the aid of a sample rotator. Good prospects in the device transplantation are identified as a new high-resolution method for microdevice assembly and device repair. These FIB applications can be visually performed using scanning ion microscope (SIM) images. Specifications of the FIB apparatus for these applications and FIB micromachining simulation are also discussed.

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10.1143/JJAP.29.2283