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Real-Time Observation of GaAs(001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction

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Copyright (c) 1988 The Japan Society of Applied Physics
, , Citation Toshiro Isu et al 1988 Jpn. J. Appl. Phys. 27 L2259 DOI 10.1143/JJAP.27.L2259

1347-4065/27/12A/L2259

Abstract

GaAs(001) surfaces during MBE growth was observed by scanning microprobe RHEED. A microprobe electron gun for RHEED was installed in an MBE chamber. Using intensity variation of RHEED patterns produced by the scanning of an incident beam, we obtained a microscopic image highly sensitive to the surface structure. Scanning reflection electron images revealed granular features over the whole surface, which came from small undulations on the surface of the MBE grown layer. The undulation became larger along [bar 110] direction as growth proceeded. No contrast was observed in the secondary electron images.

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10.1143/JJAP.27.L2259