Abstract
Y-Ba-Cu-O thin films have been prepared on sapphire substrates by RF magnetron sputtering from sintered targets. The substrate temperature dependence of Ba and Cu concentrations against Y of as-sputtered films has been clarified. Film composition deviated from target composition. Cu concentration decreased significantly with increasing Ts, while Ba concentration was independent of the substrate temperature. Using the CuO-compensated Y1Ba6Cu10Ox target, assputtered high-Tc films (Tc onset=87 K, Tc endpoint=40 K) have been successfully obtained as a Ts of about 580°C.
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