Abstract
A Raman study on the relation between the silicon bonds and the deposition conditions of amorphous silicon films is presented. Changes in the Raman spectra are investigated as functions of the deposition conditions. The Raman shift of the TO peak is found to become larger when the substrate temperature is increased. Numerical calculations on the local vibrations of the silicon network are carried out and it is shown that the change in the peak position is caused by the change in the stretching force constant of the silicon bonds.