Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate

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Copyright (c) 1984 The Japan Society of Applied Physics
, , Citation Toshio Nonaka et al 1984 Jpn. J. Appl. Phys. 23 L919 DOI 10.1143/JJAP.23.L919

1347-4065/23/12A/L919

Abstract

GaAs MESFET ring oscillators were successfully fabricated on silicon substrate. GaAs epitaxial layers were grown directly by MOCVD on Si(100) substrate. A typical transconductance of 200 mS/mm was observed for the FET of 1.0 µm × 10 µm gate. A minimum propagation delay time of 51 ps/gate at a power dissipation of 1.1 mW/gate was observed for an E/D gate ring oscillator with gate length of 1.0 µm.

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10.1143/JJAP.23.L919