Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2 Layers by Very High Dose Oxygen-Ion Implantation
Takayoshi Hayashi1, Hamao Okamoto1 and Yoshikazu Homma1
Copyright (c) 1980 The Japan Society of Applied Physics
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Citation Takayoshi Hayashi et al 1980 Jpn. J. Appl. Phys. 19 1005
DOI 10.1143/JJAP.19.1005
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