Abstract
An optical Kerr signal has been simulated for GaAs/AlAs multilayer cavity structures by using the self-consistent transfer matrix method. Enhancement of the Kerr signal intensity was clearly demonstrated for the cavity mode (λ∼1504 nm) owing to the strong optical field in the multilayer cavity. The Kerr signal intensity can be further enhanced with the use of a higher nonlinear refractive index only for the half-wavelength (λ/2) cavity layer. We propose a GaAs/AlAs multilayer structure with the λ/2 cavity layer containing InAs quantum dots embedded in strain-relaxed barriers for an ultrafast optical Kerr gate switch with extremely low switching energy.