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Weak localization effects in some metallic perovskites

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Abstract.

We report a systematic study of the low-temperature electrical resistivity of epitaxial nanometric SrRuO3 and LaNiO3 thin films. Weak localization effects were taken into account in order to explain the presence of minima in the \(\rho \)-T curves. This description can be rationalized by the fact that, at the given growth conditions, the mean free path was comparable to the Fermi wavelength of the carriers, so that effects arising from quantum interference of the electronic wavefunctions were expected. The results reported here are of special interest to understand the relevance of weak localization effects in oxides.

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Authors and Affiliations

  1. Institut de Ciéncia de Materials de Barcelona, Campus de la UAB, 08193, Bellaterra, Catalunya, Spain

    G. Herranz, F. Sánchez, B. Martínez & J. Fontcuberta

  2. Departament de Física Aplicada i Óptica, Universitat de Barcelona, Diagonal 647, 08028, Barcelona, Catalunya, Spain

    M. V. García-Cuenca, C. Ferrater & M. Varela

  3. Departamento de Física, CAC, CNEA, Av. Gral Paz 1499 (1650), San Martín, Buenos Aires, Argentina

    P. Levy

Authors
  1. G. Herranz
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  2. F. Sánchez
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  3. B. Martínez
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  4. J. Fontcuberta
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  5. M. V. García-Cuenca
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  6. C. Ferrater
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  7. M. Varela
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  8. P. Levy
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Corresponding author

Correspondence to G. Herranz.

Additional information

Received: 16 December 2003, Published online: 13 July 2004

PACS:

72.15.Rn Localization effects (Anderson or weak localization) - 72.80.Ga Transition-metal compounds - 73.50.Bk General theory, scattering mechanisms

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Herranz, G., Sánchez, F., Martínez, B. et al. Weak localization effects in some metallic perovskites. Eur. Phys. J. B 40, 439–444 (2004). https://doi.org/10.1140/epjb/e2004-00207-9

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  • DOI: https://doi.org/10.1140/epjb/e2004-00207-9

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