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Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy

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Abstract

We report on the fabrication of nonpolar GaN(11‒20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase epitaxy on an r-Al2O3 substrate. It is shown that the elastic stresses in the GaN(11‒20)/r-Al2O3 structure in the directions of the c and a axes of the layer have different values, correlate with the full widths at half maximum of the rocking curves in the X-ray diffraction spectra in these directions, and are caused by the anisotropy of the thermal expansion coefficients of the layer and substrate lattices.

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ACKNOWLEDGMENTS

The authors are grateful to S.N. Rodin for depositing the AlN buffer layer.

Funding

V.N. Bessolov, E.V. Konenkova, and V.N. Panteleev thank for support the Russian Foundation for Basic Research, project no. 20-08-00096.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    V. N. Bessolov, E. V. Konenkova, N. V. Seredova, V. N. Panteleev & M. E. Scheglov

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  1. V. N. Bessolov
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  2. E. V. Konenkova
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  3. N. V. Seredova
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  4. V. N. Panteleev
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  5. M. E. Scheglov
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Corresponding author

Correspondence to E. V. Konenkova.

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The authors declare that they have no conflicts of interest.

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Translated by E. Bondareva

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Bessolov, V.N., Konenkova, E.V., Seredova, N.V. et al. Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy. Semiconductors 56, 164–168 (2022). https://doi.org/10.1134/S106378262202004X

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  • DOI: https://doi.org/10.1134/S106378262202004X

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