Low-temperature mechanochemical synthesis of nanosized silicon carbide

Abstract

The methods of X-ray diffraction analysis, scanning electron microscopy, synchronous thermal analysis, and adsorption are used to study the mechanochemical synthesis of silicon carbide through the reaction Si + C → β-SiC. The reaction is found to take place in several stages. At the first stage, i.e., at activation doses below approximately 5 kJ/g, the powders of the components are independently ground to increase the specific surface area of the mixture to 145 m²/g, graphite is amorphized, and the sizes of the coherent-scattering regions of silicon drastically diminish. At the second stage (doses of 5–15 kJ/g), dense Si/C aggregates are formed and two fractions (coarse and fine) with different particle sizes arise in silicon crystallites. As the activation dose is enhanced, the amount of the fine fraction rises, while the sizes of coherent-scattering regions decrease to 2–3 nm. When samples are heated at 800°C, the fine fraction of silicon interacts with carbon to yield silicon carbide with crystallite sizes of 3–4 nm, whereas the coarse fraction of silicon recrystallizes. At the third stage, i.e., at doses of higher than 15 kJ/g, the mechanochemical synthesis of SiC occurs through the following scheme: fine fraction Si + C → amorphous SiC → crystallization of SiC.