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Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2

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Abstract

The charge transport mechanism in thin amorphous and ferroelectric Hf0.5Zr0.5O2 films has been studied. It has been shown that the transport mechanism in studied materials does not depend on the crystal phase and is phonon-assisted tunneling between traps. The comparison of the experimental current–voltage characteristics of TiN/Hf0.5Zr0.5O2/Pt structures with the calculated ones provides the trap parameters: thermal energy of 1.25 eV and the optical energy of 2.5 eV. The trap concentration has been estimated as ~1019–1020 cm–3.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    D. R. Islamov, T. V. Perevalov & V. A. Gritsenko

  2. Novosibirsk State University, Novosibirsk, 630090, Russia

    D. R. Islamov, T. V. Perevalov & V. A. Gritsenko

  3. Moscow Institute of Physics and Technology, Dolgoprudnyi, Moscow region, 141700, Russia

    A. G. Chernikova, M. G. Kozodaev & A. M. Markeev

  4. Research Institute of Molecular Electronics, Zelenograd, Moscow, 124460, Russia

    O. M. Orlov

Authors
  1. D. R. Islamov
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  2. A. G. Chernikova
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  3. M. G. Kozodaev
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  4. A. M. Markeev
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  5. T. V. Perevalov
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  6. V. A. Gritsenko
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  7. O. M. Orlov
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Correspondence to D. R. Islamov.

Additional information

Original Russian Text © D.R. Islamov, A.G. Chernikova, M.G. Kozodaev, A.M. Markeev, T.V. Perevalov, V.A. Gritsenko, O.M. Orlov, 2015, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2015, Vol. 102, No. 8, pp. 610–614.

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Islamov, D.R., Chernikova, A.G., Kozodaev, M.G. et al. Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2 . Jetp Lett. 102, 544–547 (2015). https://doi.org/10.1134/S0021364015200047

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  • DOI: https://doi.org/10.1134/S0021364015200047

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