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Growing nanocrystalline silicon on sapphire by molecular beam epitaxy

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Abstract

It is established that an array of silicon nanoislands is formed on the surface of a sapphire substrate at the initial stages of molecular beam epitaxy. Silicon islands formed at low temperatures of the substrate (below 650°C) exhibit a pyramidal shape, while the islands grown at T > 650° possess a dome shape. The maximum density of islands was 2 × 1011 cm−2, their lateral dimensions were within 20 nm, and their heights did not exceed 3 nm.

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Authors and Affiliations

  1. Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia

    D. A. Pavlov, P. A. Shilyaev, E. V. Korotkov & N. O. Krivulin

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  1. D. A. Pavlov
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  2. P. A. Shilyaev
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  3. E. V. Korotkov
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  4. N. O. Krivulin
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Corresponding author

Correspondence to E. V. Korotkov.

Additional information

Original Russian Text © D.A. Pavlov, P.A. Shilyaev, E.V. Korotkov, N.O. Krivulin, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 12, pp. 16–22.

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Pavlov, D.A., Shilyaev, P.A., Korotkov, E.V. et al. Growing nanocrystalline silicon on sapphire by molecular beam epitaxy. Tech. Phys. Lett. 36, 548–550 (2010). https://doi.org/10.1134/S1063785010060180

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  • DOI: https://doi.org/10.1134/S1063785010060180

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