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Photosensitivity of heterojunctions formed by deposition of gum on a layered III–VI semiconductor

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Abstract

The list of materials showing promise for the production of photosensitive structures is extended to include an organic material of biological origin known as gum. The current-voltage characteristics of hetero-junctions formed by a gum layer and a layered semiconductor (InSe, GaSe) are studied. An attempt is made to relate some spectral features of the relative quantum efficiency of the structures (for example, nonzero photosensitivity beyond the fundamental absorption edge of the semiconductor material) to the deformation interaction between the condensed gum layer and the layered III–VI semiconductor surface.

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Authors and Affiliations

  1. Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Chernovtsy, 58001, Ukraine

    S. I. Drapak & Z. D. Kovalyuk

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  1. S. I. Drapak
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  2. Z. D. Kovalyuk
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Correspondence to S. I. Drapak.

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Original Russian Text © S.I. Drapak, Z.D. Kovalyuk, 2007, published in Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 77, No. 9, pp. 76–80.

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Drapak, S.I., Kovalyuk, Z.D. Photosensitivity of heterojunctions formed by deposition of gum on a layered III–VI semiconductor. Tech. Phys. 52, 1178–1182 (2007). https://doi.org/10.1134/S1063784207090125

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