Abstract
The elastic properties of nanoscale silicon carbide film grown on a silicon substrate by the method of atomic substitution were studied. The Young modulus of nanoscale silicon carbide was for the first time measured by nanoindentation method. The structural characteristics of silicon carbide film on silicon were studied by the optical profilometry and spectral ellipsometry; the roughness and thickness of film were m-easured.
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ACKNOWLEDGMENTS
Experimental studies were performed using the unique facility “Physics, chemistry and mechanics of crystalline and thin films” (Institute for Problems in Mechanical Engineering, RAS).
Funding
The work accomplished by S.A. Kukushkin was partially supported in terms of the design part of the RF Government task, project no. 16.2811.2917/4.6 of the RF Ministry of Science and Education. A.V. Osipov was supported by the Russian Science Foundation, project no. 19-72-30004.
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Grashchenko, A.S., Kukushkin, S.A. & Osipov, A.V. Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution. Phys. Solid State 61, 2310–2312 (2019). https://doi.org/10.1134/S106378341912014X
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DOI: https://doi.org/10.1134/S106378341912014X