Abstract
It is shown that (Ga,Mn)As layers formed by Mn+ ion implantation into GaAs and subsequent annealing by an excimer laser pulse with an energy density to 200–300 mJ/cm2 feature the properties of the p-type semiconductor and ferromagnetic properties. The threshold dose of implanted ions (~1015 cm–2) for activating Mn acceptors is determined. The sheet hole concentration and the Curie temperature increase with further increasing Mn+ ion dose. Hysteresis loops in the magnetic field dependences of the Hall effect, the negative magnetoresistance, and magnetic and structural studies suggest that the layers are analogues of single-phase ferromagnetic compounds (Ga,Mn)As formed by low-temperature molecular beam epitaxy.
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Original Russian Text © Yu.A. Danilov, H. Boudinov, O.V. Vikhrova, A.V. Zdoroveyshchev, A.V. Kudrin, S.A. Pavlov, A.E. Parafin, E.A. Pitirimova, R.R. Yakubov, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 11, pp. 2140–2144.
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Danilov, Y.A., Boudinov, H., Vikhrova, O.V. et al. Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing. Phys. Solid State 58, 2218–2222 (2016). https://doi.org/10.1134/S1063783416110056
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DOI: https://doi.org/10.1134/S1063783416110056