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Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO x = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

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Authors and Affiliations

  1. Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir, Avenue de I’environnement, Université de Monastir, 5019, Monastir, Tunisia

    S. Chatbouri, M. Troudi, N. Sghaier, A. Kalboussi & D. Drouin

  2. Equipe composants électroniques (UR/99/13-22), Institut Préparatoire aux Etudes d’lngenieurs de Nabeul (IPEIN), Université de Carthage, 8000, Merazka, Nabeul, Tunisia

    N. Sghaier

  3. Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique, Université de Sherbrooke, 3000 Boulevard de I’Universite, Sherbrooke, J1K OA5, Québec, Canada

    V. Aimez

  4. Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270, Bât. Blaise Pascal, 7 avenue Jean Capelle, 69621, Villeurbanne cedex, France

    A. Souifi

Authors
  1. S. Chatbouri
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  2. M. Troudi
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  3. N. Sghaier
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  4. A. Kalboussi
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  7. A. Souifi
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Correspondence to S. Chatbouri.

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Chatbouri, S., Troudi, M., Sghaier, N. et al. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector. Semiconductors 50, 1163–1167 (2016). https://doi.org/10.1134/S1063782616090062

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  • DOI: https://doi.org/10.1134/S1063782616090062

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