Abstract
The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N LuA ≈ 1.9 × 1020−1.9 × 1021 cm−3 (x = 0.01–0.10) at H ≤ 10 kG is studied. The nature of the structural-defect generation mechanism leading to changes in the band gap and the degree of semiconductor compensation is determined. Its essence is the simultaneous reduction and elimination of donor-type structural defects due to the displacement of ∼1% of Ni atoms from the Hf (4a) site, the generation of acceptor-type structural defects by substituting Ni atoms with Lu atoms at the 4c site, and the generation of donor-type defects such as vacancies at the Sn (4b) site. The results of calculations of the electronic structure of Hf1 − x Lu x NiSn are in agreement with experimental data. The results are discussed within the model of a heavily doped and compensated Shklovskii-Efros semiconductor.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, New York, 1984; Moscow, Nauka, 1979).
V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka, E. K. Hlil, V. Ya. Krajovskii, and A. M. Horyn, Semiconductors 46, 1106 (2012).
V. A. Romaka, P. Rogl, Yu. V. Stadnyk, V. V. Romaka, E. K. Hlil, V. Ya. Krajovskii, and A. M. Horyn, Semiconductors 47, 1145 (2013).
R. Ferro and A. Saccone, Intermetallic Chemistry (Elsevier, Amsterdam, 2008).
F. G. Aliev, N. B. Brandt, V. V. Kozyr’kov, V. V. Moshchalkov, R. V. Skolozdra, Yu. V. Stadnyk, and V. K. Pecharskii, JETP Lett. 45, 684 (1987).
S. Ögut and K. M. Rabe, Phys. Rev. B 51, 10443 (1995).
C. Uher, J. Yang, S. Hu, D. T. Morelli, and G. P. Meisner, Phys. Rev. B 59, 8615 (1999).
T. M. Tritt and M. A. Sabramanian, MRS Bull. 31, 188 (2006).
V. A. Romaka, V. V. Romaka, and Yu. V. Stadnyk, Intermetallic Semiconductors: Properties and Applications (L’vovsk. Politekh., L’vov, 2011) [in Russian].
T. Roisnel and J. Rodriguez-Carvajal, in Proceedings of the 7th European Powder Diffraction Conference EPDIC7, Mater. Sci. Forum 378–381, 118 (2001).
M. Schroter, H. Ebert, H. Akai, P. Entel, E. Hoffmann, and G. G. Reddy, Phys. Rev. B 52, 188 (1995).
V. L. Moruzzi, J. F. Janak, and A. R. Williams, Calculated Electronic Properties of Metals (Pergamon, New York, 1978).
V. V. Romaka, P. Rogl, L. Romaka, Yu. Stadnyk, A. Grytsiv, O. Lakh, and V. Krayovsky, Intermetallics 35, 45 (2013).
V. A. Romaka, Yu. V. Stadnyk, V. V. Romaka, D. Fruchart, Yu. K. Gorelenko, V. F. Chekurin, and A. M. Horyn, Semiconductors 41, 1041 (2007).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.A. Romaka, P. Rogl, V.V. Romaka, D. Kaczorowski, Yu.V. Stadnyk, R.O. Korzh, V.Ya. Krayovskyy, T.M. Kovbasyuk, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 3, pp. 299–306.
Rights and permissions
About this article
Cite this article
Romaka, V.A., Rogl, P., Romaka, V.V. et al. Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped. Semiconductors 49, 290–297 (2015). https://doi.org/10.1134/S1063782615030185
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782615030185