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Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures

  • XVIII Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 10–14, 2014
  • Published:
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Abstract

The exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures with a two-dimensional electron gas is studied. Analysis of the temperature dependence of the resistance in the minima of the Shubnikov-de Haas oscillations in perpendicular magnetic fields up to 12 T in the vicinity of the odd filling factors of the Landau levels yields the values of the effective electron Lande factor g* from −8.6 to −10.1. The experimental values are compared with the results of theoretical calculations of the g factor of quasiparticles. The calculations are performed using an eight-band k · p Hamiltonian and take into account exchange interaction in the two-dimensional electron gas. It is shown that, under the conditions of a large overlap between the spin-split Landau levels, the maximum value of the quasiparticle g factor can be attained in the vicinity of even filling factors. This is caused by the nonparabolicity of the electron dispersion relation.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    S. S. Krishtopenko, K. V. Maremyanin, K. P. Kalinin, K. E. Spirin & V. I. Gavrilenko

  2. Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950, Russia

    S. S. Krishtopenko, K. V. Maremyanin, K. E. Spirin, V. I. Gavrilenko, N. V. Baidus & B. N. Zvonkov

  3. Department of General and Applied Physics, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russia

    K. P. Kalinin

  4. International Laboratory of High Magnetic Fields and Low Temperatures, 95 Gajowicka str., 53-421, Wroclaw, Poland

    K. E. Spirin

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  1. S. S. Krishtopenko
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  2. K. V. Maremyanin
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Correspondence to K. V. Maremyanin.

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Original Russian Text © S.S. Krishtopenko, K.V. Maremyanin, K.P. Kalinin, K.E. Spirin, V.I. Gavrilenko, N.V. Baidus, B.N. Zvonkov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 2, pp. 196–203.

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Krishtopenko, S.S., Maremyanin, K.V., Kalinin, K.P. et al. Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures. Semiconductors 49, 191–198 (2015). https://doi.org/10.1134/S1063782615020141

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