Abstract
Composite InGaN/GaN/InAlN quantum dots (QDs) have been formed and studied. The structural properties of thin InAlN layers overgrown with GaN have been analyzed, and it is shown that 3D islands with lateral sizes of ∼(20–30) nm are formed in structures of this kind. It is demonstrated that deposition of a thin InGaN layer onto the surface of InAlN islands overgrown with a thin GaN layer leads to transformation of the continuous InGaN layer to an array of isolated QDs with lateral sizes of 20–30 nm and heights of 2–3 nm. The position of these QDs in the growth direction correlates with that of InAlN islands.
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Original Russian Text © A.F. Tsatsul’nikov, E.E. Zavarin, N.V. Kryzhanovskaya, W.V. Lundin, A.V. Saharov, S.O. Usov, P.N. Brunkov, V.V. Goncharov, N.A. Cherkashin, M. Hytch, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 10, pp. 1382–1386.
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Tsatsul’nikov, A.F., Zavarin, E.E., Kryzhanovskaya, N.V. et al. Formation of composite InGaN/GaN/InAlN quantum dots. Semiconductors 44, 1338–1341 (2010). https://doi.org/10.1134/S1063782610100167
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DOI: https://doi.org/10.1134/S1063782610100167