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Photosensitivity of n-CdS/p-CdTe heterojunctions obtained by chemical surface deposition of CdS

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

A new technology of chemical surface deposition is developed, and thin CdS films (35–100 nm) on the p-CdTe substrates are obtained. Electrical and photoelectric properties of n-CdS/p-CdTe heterojunctions are studied, and it is shown that the developed method provides high efficiency of photoconversion in the range restricted by the CdTe and CdS band gaps. It is shown that the method of chemical surface deposition of CdS can be used in the design of thin-film n-CdS/p-CdTe.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    Yu. V. Rud’

  2. Lvivska Polytechnika National University, Lviv, 79013, Ukraine

    G. A. Il’chuk, V. V. Kusnezh, P. Yo. Shapowal & R. Yu. Petrus’

  3. St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    V. Yu. Rud’

Authors
  1. G. A. Il’chuk
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  2. V. V. Kusnezh
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  3. V. Yu. Rud’
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  4. Yu. V. Rud’
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  5. P. Yo. Shapowal
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  6. R. Yu. Petrus’
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Corresponding author

Correspondence to V. Yu. Rud’.

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Original Russian Text © G.A. Il’chuk, V.V. Kusnezh, V.Yu. Rud’, Yu.V. Rud’, P.Yo. Shapowal, R.Yu. Petrus’, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 3, pp. 335–337.

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Il’chuk, G.A., Kusnezh, V.V., Rud’, V.Y. et al. Photosensitivity of n-CdS/p-CdTe heterojunctions obtained by chemical surface deposition of CdS. Semiconductors 44, 318–320 (2010). https://doi.org/10.1134/S1063782610030085

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  • DOI: https://doi.org/10.1134/S1063782610030085

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