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Determination of the composition and stresses in GexSi(1−x) heterostructures from Raman spectroscopy data: Refinement of model parameters

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Raman spectroscopy is used to monitor the composition and strains of GexSi1−x alloy films with 0.17 ≤ x ≤ 1.0. The composition and strains in the films were also determined from the X-ray diffraction data. Both the position and intensity of the Raman peaks related to vibrations of the Ge-Ge, Ge-Si, and Si-Si bonds were analyzed. This analysis provided substantial refinement of certain model parameters for calculation of the composition and strains in GexSi1−x /Si(100) heterostructures on the basis of Raman spectroscopy data.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    V. A. Volodin, M. D. Efremov, A. S. Deryabin & L. V. Sokolov

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  1. V. A. Volodin
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  2. M. D. Efremov
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  3. A. S. Deryabin
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  4. L. V. Sokolov
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Original Russian Text © V.A. Volodin, M.D. Efremov, A.S. Deryabin, L.V. Sokolov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 11, pp. 1349–1355.

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Volodin, V.A., Efremov, M.D., Deryabin, A.S. et al. Determination of the composition and stresses in GexSi(1−x) heterostructures from Raman spectroscopy data: Refinement of model parameters. Semiconductors 40, 1314–1320 (2006). https://doi.org/10.1134/S106378260611011X

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  • DOI: https://doi.org/10.1134/S106378260611011X

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