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Growth of Y3Fe5O12 films on Si with AlO x and SiO2 buffer layers by ion beam sputtering

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Abstract

Amorphous yttrium iron garnet films ranging in thickness from 100 to 600 nm have been produced on single-crystal silicon substrates by sputtering a polycrystalline target with the composition Y3Fe5O12 (yttrium iron garnet) by a mixture of argon and oxygen ions. Before film growth, AlO x or SiO2 buffer layers up to 0.8 μm in thickness were grown on the Si surface. The heterostructures were crystallized by annealing in air at a temperature of 950°C for 30 min. The properties of the films were studied by magneto-optical techniques, using Kerr effect and ferromagnetic resonance measurements. The Gilbert damping parameter reached 2.8 × 10–3 and the effective planar magnetic anisotropy field was independent of the nature of the buffer layer. This suggests that the thin-film heterostructures obtained in this study are potentially attractive for use in spin-wave semiconductor devices.

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Authors and Affiliations

  1. Scientific–Practical Materials Research Centre, Belarussian Academy of Sciences, vul. Brovki 19, Minsk, 220072, Belarus

    A. I. Stognij & N. N. Novitskii

  2. Moscow State Institute of Radio Engineering, Electronics, and Automation (Technological University), pr. Vernadskogo 78, Moscow, 119454, Russia

    O. L. Golikova & A. V. Bespalov

  3. Laboratory of Magnetism, Faculty of Physics, University of Bialystok, Giolkowskiego 1L, Bialystok, 15-240, Poland

    R. Gieniusz, A. Maziewski & A. Stupakiewicz

  4. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia

    M. N. Smirnova & V. A. Ketsko

Authors
  1. A. I. Stognij
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  2. N. N. Novitskii
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  3. O. L. Golikova
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  4. A. V. Bespalov
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  5. R. Gieniusz
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  6. A. Maziewski
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  7. A. Stupakiewicz
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  8. M. N. Smirnova
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  9. V. A. Ketsko
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Correspondence to A. I. Stognij.

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Original Russian Text © A.I. Stognij, N.N. Novitskii, O.L. Golikova, A.V. Bespalov, R. Gieniusz, A. Maziewski, A. Stupakiewicz, M.N. Smirnova, V.A. Ketsko, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 10, pp. 1093–1098.

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Stognij, A.I., Novitskii, N.N., Golikova, O.L. et al. Growth of Y3Fe5O12 films on Si with AlO x and SiO2 buffer layers by ion beam sputtering. Inorg Mater 53, 1069–1074 (2017). https://doi.org/10.1134/S0020168517100156

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  • DOI: https://doi.org/10.1134/S0020168517100156

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