Abstract
A scan of the superconductor-nonsuperconductor transformation in single crystals of YBa2Cu3O6+x (x≈0.37) is done in two alternative ways, namely, by applying a magnetic field and by reducing the hole concentration through oxygen rearrangement. The in-plane normal-state resistivity ρab obtained in the two cases is quite similar; its temperature dependence can be fitted by a logarithmic law in a temperature range of almost two decades. However, an alternative representation of the temperature dependence of σab=1/ ρ ab by a power law, typical for a 3D material near a metal-insulator transition, is also plausible. The vertical conductivity σc=1/ρc followed a power law, and neither σc(T), nor ρc(T) could be fitted by log T. It follows from the ρc measurements that the transformation at T=0 is split into two transitions: superconductor-normal-metal and normal-metal-insulator. In our samples, they are separated in oxygen content by Δx≈0.025.
Similar content being viewed by others
References
E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979).
Y. Imry, J. Appl. Phys. 52, 1817 (1981).
B. L. Altshuler and A. G. Aronov, in Electron-Electron Interactions in Disordered Systems, A. L. Efros and M. Pollak, eds., Amsterdam: North-Holland, 1985.
N. F. Mott, Metal-Insulator Transitions, 2nd ed., London: Taylor and Francis, 1990.
B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, Berlin: Springer, 1984.
V. F. Gantmakher, V. N. Zverev, V. M. Teplinskii, and O. I. Barkalov, Zh. Éksp. Teor. 103, 1460 (1993) [JETP 76, 714 (1993)].
D. B. Haviland, Y. Liu, and A. M. Goldman, Phys. Rev. Lett. 62, 2180 (1989).
G. Deutscher, B. Bandyopadhyay, T. Chui et al., Phys. Rev. Lett. 44, 1150 (1980).
R. W. Simon, B. J. Dalrymple, D. van Vechten et al., Phys. Rev. 36, 1962 (1987).
A. Gerber, J. Phys.: Condens. Matter 2, 8167 (1990).
V. Radhakrishnan, C. K. Subramaniam, V. Sankaranarayanan et al., Physica C 167, 53 (1990).
Y. Ando, G. S. Boebinger, A. Passner et al., Phys. Rev. Lett. 75, 4662 (1995).
Y. Ando, G. S. Boebinger, A. Passner et al., J. Low Temp. Phys. 105, 867 (1996).
V. F. Gantmakher, V. V. Sinitsyn, G. E. Tsydynzhapov et al., JETP Lett. 65, 476 (1997).
H. Claus, S. Yang, A. P. Paulicas, et al., Physica C 171, 205 (1990).
A. N. Lavrov and L. P. Kozeeva, Physica C 253, 313 (1995).
A. N. Lavrov and L. P. Kozeeva, Physica C 248, 365 (1995).
B. W. Veal and A. P. Paulicas, Physica C 184, 321 (1991).
G. V. Uimin, V. F. Gantmakher, A. M. Neminsky et al., Physica C 192, 481 (1992).
A. M. Neminsky and D. V. Shovkun, Physica C 252, 327 (1995).
D. A. Brawner, Z. Z. Wang, and N. P. Ong, Phys. Rev. B. 40, 9329 (1989).
Author information
Authors and Affiliations
Additional information
Pis’ma Zh. Éksp. Teor. Fiz. 65, No. 11, 834–839 (10 June 1997)
Published in English in the original Russian journal. Edited by Steve Torstveit.
Rights and permissions
About this article
Cite this article
Gantmakher, V.F., Pushin, D.A., Shovkun, D.V. et al. Low-temperature resistivity of YBa2Cu3O6+x single crystals in the normal state. Jetp Lett. 65, 870–876 (1997). https://doi.org/10.1134/1.567439
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.567439