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Spontaneous and stimulated UV luminescence of ZnO:N at 77 K

  • Electronic and Optical Properties of Semiconductors
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Abstract

The spontaneous and stimulated UV luminescence spectra of ZnO:N samples possessing different nitrogen contents are measured at a temperature of 77 K. Luminescence peaks resulting from bound and free excitons, biexcitons, and electron recombination via the nitrogen acceptor level are identified. The optical depth (123 meV) of the NO impurity acceptor level is determined. It is established that stimulated UV luminescence originating from inelastic exciton interaction sets in as the optical pump power increases.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    A. N. Georgobiani

  2. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    A. N. Gruzintsev & E. E. Yakimov

  3. 75252, Paris Cedex 05, France

    C. Barthou & P. Benalloul

Authors
  1. A. N. Georgobiani
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  2. A. N. Gruzintsev
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  3. E. E. Yakimov
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  4. C. Barthou
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  5. P. Benalloul
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 6, 2005, pp. 692–696.

Original Russian Text Copyright © 2005 by Georgobiani, Gruzintsev, Yakimov, Barthou, Benalloul.

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Georgobiani, A.N., Gruzintsev, A.N., Yakimov, E.E. et al. Spontaneous and stimulated UV luminescence of ZnO:N at 77 K. Semiconductors 39, 661–665 (2005). https://doi.org/10.1134/1.1944856

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  • DOI: https://doi.org/10.1134/1.1944856

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