Abstract
Probe force microscopy continues growing in popularity as a method for studying surfaces of solids and control over crystals and thin films that are grown on various scientific and industrial setups. New modifications of the method increase the possibilities for recording various characteristics of the objects studied. An important role here is played by “electrical” force microscopy, the various modifications and practical applications of which are considered below, as well as the results obtained by this method.
Similar content being viewed by others
References
G. Binnig, C. F. Quate, and Ch. Gerber, Phys. Rev. Lett. 56, 930 (1986).
Y. Martin and H. K. Wickramasinghe, Appl. Phys. Lett. 50, 1455 (1987).
J. J. Séenz, N. Garcia, P. Grütter, et al., J. Appl. Phys. 62, 4293 (1987).
A. Wadas, J. Magn. Magn. Mater. 71, 147 (1988).
U. Hartmann, J. Appl. Phys. 64, 1561 (1988).
J. Sáenz, N. Garcia, and J. C. Slonczewski, Appl. Phys. Lett. 53, 1449 (1988).
M. Mansuripur, IEEE Trans. Magn. 22, 3467 (1989).
Y. Martin, D. W. Abraham, and H. K. Wickramasinghe, Appl. Phys. Lett. 52, 1103 (1988).
R. Erlandsson, G. M. McClelland, C. M. Mate, and S. Chiang, J. Vac. Sci. Technol. A 6, 266 (1988).
J. E. Stern, B. D. Terris, H. J. Mamin, and D. Rugar, Appl. Phys. Lett. 53, 2717 (1988).
C. Schönenberger and S. F. Alvarado, Rev. Sci. Instrum. 60, 3131 (1989).
B. D. Terris, J. E. Stern, D. Rugar, and H. J. Mamin, Phys. Rev. B 63, 2669 (1989).
J. R. Matey and J. Blanc, J. Appl. Phys. 57, 1437 (1985).
I. V. Yaminskii and A. M. Tishin, Usp. Khim. 68(3), 187 (1999).
S. Lányi, J. Török, and P. Řehůřek, Rev. Sci. Instrum. 65, 2258 (1994).
C. D. Bugg and P. J. King, J. Phys. E: Sci. Instrum. 21, 147 (1988).
J. L. de Jong and J. D. Reimer, Scan. Electron Microsc. 3, 933 (1986).
P. Muralt and D. W. Pohl, Appl. Phys. Lett. 48, 514 (1986).
J. P. Pelz and R. H. Koch, Rev. Sci. Instrum. 60, 301 (1989).
A. K. Henning, T. Hochwitz, J. Slinkman, et al., J. Appl. Phys. 77, 1888 (1995).
U. Hartmann, Ultramicroscopy 42–44, 59 (1992).
O. Teschke and E. F. de Souza, Appl. Phys. Lett. 74, 1755 (1999).
Y. Martin, C. C. Williams, and H. K. Wickramasinghe, J. Appl. Phys. 61, 4723 (1987).
H. W. Hao, A. M. Baró, and J. J. Sáenz, J. Vac. Sci. Technol. B 9, 1323 (1991).
S. Gómez-Moñivas, L. S. Froufe-Pérez, A. J. Caamaño, and J. J. Sáenz, Appl. Phys. Lett. 79, 4048 (2001).
S. Belaidi, F. Lebon, P. Girard, et al., Appl. Phys. A 66, S239 (1998).
S. Belaidi, P. Girard, and G. Lévéque, J. Appl. Phys. 81, 1023 (1997).
S. Belaidi, P. Girard, and G. Lévéque, Microelectron. Reliab. 37, 1627 (1997).
D. M. Taylor, Thin Solid Films 331, 1 (1998).
A. Gil, J. Colchero, J. Gómez-Herrero, and A. M. Baró, Nanotechnology 14, 332 (2003).
Y. Sugawara, T. Uchihashi, M. Abe, and S. Morita, Appl. Surf. Sci. 140, 371 (1999).
S. Sounilhac, E. Barthel, and F. Creuzet, Appl. Surf. Sci. 140, 411 (1999).
J. W. Hong, S.-I. Park, and Z. G. Khim, Rev. Sci. Instrum. 70, 1735 (1999).
K. Okamoto, Y. Sugawara, and S. Morita, Appl. Surf. Sci. 188, 381 (2002).
S. Gómez-Moñivas, L. S. Froufe, R. Carminati, et al., Nanotechnology 12, 496 (2001).
H. Bluhm, A. Wadas, R. Wiesendanger, et al., Phys. Rev. B 55, 4 (1997).
A. San Paulo and R. Garcia, Phys. Rev. B 66, 041406(R) (2002).
S. Kitamura, K. Suzuki, and M. Iwatsuki, Appl. Surf. Sci. 140, 265 (1999).
S. Kitamura, K. Suzuki, M. Iwatsuki, and C. B. Mooney, Appl. Surf. Sci. 157, 222 (2000).
D. Sarid, Scanning Force Microscopy with Applications to Electric, Magnetic, and Atomic Forces (Oxford Univ. Press, New York, 1994).
C. Donolato, J. Appl. Phys. 78, 684 (1995).
S. Hudlet, M. Saint Jean, B. Roulet, et al., J. Appl. Phys. 77, 3308 (1995).
Y. J. Huang, J. Slinkman, and C. C. Williams, Ultramicroscopy 42–44, 298 (1992).
Ch. Sommerhalter, Th. Glatzel, Th. W. Matthes, et al., Appl. Surf. Sci. 157, 263 (2000).
P. Girard, Nanotechnology 12, 485 (2001).
J. W. Hong, D. S. Kahng, J. C. Shin, et al., J. Vac. Sci. Technol. B 16, 2942 (1998).
S. Gómez-Moñivas, J. J. Sáenz, R. Carminati, and J. J. Greffet, Appl. Phys. Lett. 76, 2955 (2000).
F. Muller, A. D. Muller, M. Hietschold, and S. Kammer, Meas. Sci. Technol. 9, 734 (1998).
S. J. T. Van Noort, K. O. Van der Werf, B. G. de Grooth, et al., Ultramicroscopy 69, 117 (1997).
J. P. Spatz, S. Sheiko, M. Moller, et al., Langmuir 13, 4699 (1997).
R. Hillenbrand, M. Stark, and R. Guckenberger, Appl. Phys. Lett. 76, 3478 (2000).
S. J. O’Shea, R. M. Atta, and M. E. Welland, Rev. Sci. Instrum. 66, 2508 (1995).
H. O. Jacobs, H. F. Knapp, and A. Stemmer, Rev. Sci. Instrum. 70, 1756 (1999).
M. C. Hersam, A. C. F. Hoole, S. J. O’Shea, and M. E. Welland, Appl. Phys. Lett. 72, 915 (1998).
A. Efimov and S. R. Cohen, J. Vac. Sci. Technol. A 18, 1051 (2000).
T. Trenkler, T. Hantschel, R. Stephenson, et al., J. Vac. Sci. Technol. B 18, 418 (2000).
A. Kikukawa, S. Hosaka, and R. Imura, Appl. Phys. Lett. 66, 3510 (1995).
T. R. Albrecht, P. Grütter, D. Horne, and D. Rugar, J. Appl. Phys. 69, 668 (1991).
S. Kitamura and H. Iwatsuki, Appl. Phys. Lett. 72, 3154 (1998).
K. Okamoto, K. Yoshimoto, Y. Sugawara, and S. Morita, Appl. Surf. Sci. 210, 128 (2003).
S. Yee, M. Stratmann, and R. A. Oriani, J. Electrochem. Soc. 138, 55 (1991).
I. Baikie, U. Peterman, and B. Lagel, Surf. Sci. 433–435, 249 (1999).
B. Lagel, I. Baikie, and U. Petermann, Surf. Sci. 433–435, 622 (1999).
W. Telieps and E. Bauer, Ultramicroscopy 17, 57 (1985).
B. Bhushan and A. V. Goldade, Appl. Surf. Sci. 157, 373 (2000).
J. M. R. Weaver and D. W. Abraham, J. Vac. Sci. Technol. B 9, 1559 (1991).
M. Nonnenmacher, M. P. O’Boyle, and H. K. Wickramasinghe, Appl. Phys. Lett. 58, 2921 (1991).
M. P. O’Boyle, T. T. Hwang, and H. K. Wickramasinghe, Appl. Phys. Lett. 74, 2641 (1999).
B. Bhushan and A. V. Goldade, Wear 244, 107 (2000).
Ch. Sommerhalter, Th. W. Matthes, Th. Glatzel, et al., Appl. Phys. Lett. 75, 286 (1999).
N. A. Burnham, R. J. Colton, and H. M. Pollock, Phys. Rev. Lett. 69, 144 (1992).
H. O. Jacobs, P. Leuchtmann, O. J. Homan, and A. Stemmer, J. Appl. Phys. 84, 1168 (1998).
S. Sadewasser, Th. Glatzel, R. Shikler, et al., Appl. Surf. Sci. 210, 32 (2003).
O. Vatel and M. Tanimoto, J. Appl. Phys. 77, 2358 (1995).
Y. Leng, C. C. Williams, L. C. Su, and G. B. Stringfellow, Appl. Phys. Lett. 66, 1264 (1995).
A. K. Henning and T. Hochwitz, Mater. Sci. Eng. B 42, 88 (1996).
Th. Glatzel, S. Sadewasser, and M. Ch. Lux-Steiner, Appl. Surf. Sci. 210, 84 (2003).
T. Takahashi and T. Kawamukai, Ultramicroscopy 82, 63 (2000).
R. Shikler and Y. Rosenwaks, Appl. Surf. Sci. 157, 256 (2000).
S. Akita, S. Takahashi, and Y. Nakayama, in Abstracts of 11th International Conference of Scanning Tunneling Microscopy, Spectroscopy, and Related Techniques (Vancouver, Canada, 2001), p. 251.
S. Ono, M. Takeuchi, and T. Takahashi, Appl. Phys. Lett. 78, 1086 (2001).
M. Nonnenmacher, M. O. O’Boyle, and H. K. Wickramasinghe, Ultramicroscopy 42–44, 268 (1992).
S. Lévéque, P. Girard, E. Skouri, and D. Yarekha, Appl. Surf. Sci. 157, 251 (2000).
A. Sasahara, H. Uetsuka, and H. Onishi, Surf. Sci. 529, L245 (2003).
P. Campestrini, E. P. M. van Westing, H. W. van Rooijen, and J. H. W. de Wit, Corros. Sci. 42, 1853 (2000).
M. Tanimoto and O. Vatel, J. Vac. Sci. Technol. B 14, 1547 (1996).
F. Robin, H. Jakobs, O. Homan, et al., Appl. Phys. Lett. 76, 2907 (2000).
A. Breymesser, V. Schlosser, D. Pieró, et al., Sol. Energy Mater. Sol. Cells 66, 171 (2001).
R. Shikler, T. Meoded, N. Fried, and Y. Rosenwaks, Appl. Phys. Lett. 74, 2972 (1999).
G. Koley and M. G. Spencer, Appl. Phys. Lett. 78, 2873 (2001).
M. Vogel, B. Stein, H. Pettersson, and K. Karrai, Appl. Phys. Lett. 78, 2592 (2001).
B. D. Terris, J. E. Stern, D. Rugar, and H. J. Mamin, J. Vac. Sci. Technol. A 8, 374 (1990).
T. Ishihashi, M. Ohta, Y. Sugawara, et al., J. Vac. Sci. Technol. B 15, 1543 (1997).
Q. Xu and J. W. P. Hsu, J. Appl. Phys. 85, 2465 (1999).
K. M. Jones, P. Visconti, F. Yun, et al., Appl. Phys. Lett. 78, 2497 (2001).
M. Yasutake, D. Aoki, and M. Fujihira, Thin Solid Films 273, 279 (1996).
J. W. Hong, G. H. Noh, S. I. Park, et al., Phys. Rev. B 58, 5078 (1998).
M. Saint Jean, S. Hudlet, C. Güthmann, and J. Berger, Phys. Rev. B 56, 15391 (1997).
C. Schönenberger and S. F. Alvarado, Phys. Rev. Lett. 65, 3162 (1990).
L. M. Eng, M. Abplanalp, and P. Günter, Appl. Phys. A 66, S679 (1998).
L. M. Eng, J.-H. Güntherodt, G. Rosenman, et al., J. Appl. Phys. 83, 5973 (1998).
F. Saurenbach and B. D. Terris, Appl. Phys. Lett. 56, 1703 (1990).
K. Franke, Ferroelectr. Lett. Sect. 19, 25 (1995).
M. Labardi, V. Likodimos, and M. Allegrini, Phys. Rev. B 61, 14390 (2000).
C. Durkan, D. P. Chu, P. Migliorato, and M. E. Welland, Appl. Phys. Lett. 76, 366 (2000).
H. Q. Ni, Y. F. Lu, Z. Y. Liu, et al., Appl. Phys. Lett. 79, 812 (2001).
H. Bluhm, A. Wadas, R. Wiesendanger, et al., Appl. Phys. Lett. 71, 146 (1997).
G. H. Buh, H. J. Chung, and Y. Kuk, Appl. Phys. Lett. 79, 2010 (2001).
J. F. Bresse and S. Blayac, Solid-State Electron. 45, 1071 (2001).
P. Girard, A. N. Titkov, M. Ramonda, et al., Appl. Surf. Sci. 200, 1 (2002).
A. Ankudinov, V. Marushchak, A. Titkov, et al., Phys. Low-Dimens. Semicond. Struct. 3–4, 9 (2001).
J. Lu, E. Delamarche, R. Bennewitz, et al., in Proceedings of 10th International Conference on STM/PPM (Seoul, 1999), p. 525.
O. A. Semenikhin, L. Jiang, T. Iyoda, et al., Phys. Chem. 100, 18603 (1996).
O. A. Semenikhin, L. Jiang, T. Iyoda, et al., Electrochim. Acta 42, 3321 (1997).
R. Blum, A. Ivankov, S. Schwantes, and M. Eich, Appl. Phys. Lett. 76, 604 (2000).
K. Yagi and M. Fujihira, Appl. Surf. Sci. 157, 405 (2000).
M. Fujihira and H. Kawate, J. Vac. Sci. Technol. B 12, 1604 (1994).
A. J. Keslarek, K. A. R. Costa, and F. Galembeck, Langmuir 17, 7886 (2001).
A. Gil, P. J. de Pablo, J. Colchero, et al., Nanotechnology 13, 309 (2002).
F. Moreno-Herrero, P. Herrero, F. Moreno, et al., Nanotechnology 14, 128 (2003).
K. J. Kwak, S. Yoda, and M. Fujihira, Appl. Surf. Sci. 210, 73 (2003).
C. Di Natale, C. Goletti, R. Paolesse, et al., Sens. Actuators B 57, 183 (1999).
E. Moons, A. Goossens, and T. Savenije, J. Phys. Chem. B 101, 8492 (1997).
S. Yamashina and M. Shigeno, J. Electron Microsc. 44, 462 (1995).
C. C. Williams, W. P. Hough, and S. A. Rishton, Appl. Phys. Lett. 55, 203 (1989).
Š. Lányi, J. Török, and P. Řehůřek, J. Vac. Sci. Technol. 14, 892 (1996).
G. Neubauer, S. R. Cohen, G. M. McClelland, et al., Rev. Sci. Instrum. 61, 1884 (1990).
T. Goddenhenrich, H. Lemke, U. Hartmann, and C. Heiden, J. Vac. Sci. Technol. A 8, 383 (1990).
R. C. Barret and C. F. Quate, J. Appl. Phys. 70, 2725 (1991).
R. C. Barret and C. F. Quate, Ultramicroscopy 42–44, 262 (1992).
N. Nakagiri, T. Yamamoto, H. Sugimura, and Y. Suzuki, J. Vac. Sci. Technol. B 14, 887 (1996).
P. Stopford, T. Lodhi, R. Elgaid, et al., in Abstracts of 11th International Conference of Scanning Tunneling Microscopy, Spectroscopy, and Related Techniques (Vancouver, Canada, 2001), p. 354.
Y. Naitou and N. Ookubo, Appl. Phys. Lett. 78, 2955 (2001).
C. K. Kim, I. T. Yoon, Y. Kuk, and H. Lim, Appl. Phys. Lett. 78, 613 (2001).
X. Yu, F. D. Callaghan, P. J. Moriarti, et al., in Abstracts of 11th International Conference of Scanning Tunneling Microscopy, Spectroscopy, and Related Techniques (Vancouver, Canada, 2001), p. 40.
A. Garcia-Valenzuela, N. C. Bruce, and D. Kouznetsov, Appl. Phys. Lett. 77, 2066 (2000).
A. Born and R. Wiesendanger, Appl. Phys. A 66, 421 (1998).
Y. Huang and C. C. Williams, J. Vac. Sci. Technol. B 12, 369 (1994).
Y. Huang, C. C. Williams, and J. Slinkman, Appl. Phys. Lett. 66, 344 (1995).
C. Donolato, Mater. Sci. Eng. B 42, 99 (1996).
J. F. Marchiando, J. J. Kopanski, and J. R. Lowney, J. Vac. Sci. Technol. B 16, 463 (1998).
C. C. Williams, Annu. Rev. Mater. Sci. 29, 471 (1999).
J. J. Kopanski, J. F. Marchiando, D. W. Benning, et al., J. Vac. Sci. Technol. B 16, 339 (1998).
J. S. McMurray, J. Kim, C. C. Williams, and J. Slinkman, J. Vac. Sci. Technol. B 16, 344 (1998).
J. Kim, J. S. McMurray, C. C. Williams, and J. Slinkman, J. Appl. Phys. 84, 1305 (1998).
Y. Huang, C. C. Williams, and M. A. Wendman, J. Vac. Sci. Technol. A 14, 1168 (1996).
F. Giannazzo, F. Priolo, V. Raineri, and V. Privitera, Appl. Phys. Lett. 76, 2565 (2000).
F. Giannazzo, V. Raineri, V. Privitera, and F. Priolo, Mater. Sci. Semicond. Process. 4, 77 (2001).
L. Ciampolini, F. Gainnazzo, M. Ciappa, et al., Mater. Sci. Semicond. Process. 4, 85 (2001).
A. Shik and H. E. Ruda, Surf. Sci. 532–535, 1132 (2003).
H. Tomiye and T. Yao, Appl. Surf. Sci. 159–160, 210 (2000).
R. Stephenson, A. Verhulst, P. de Wolf, et al., J. Vac. Sci. Technol. B 18, 405 (2000).
T. Winzell, S. Anand, I. Maximov, et al., Nucl. Instrum. Methods Phys. Res. B 173, 447 (2001).
J. F. Marchiando, J. J. Kopanski, and J. Albers, J. Vac. Sci. Technol. B 18, 414 (2000).
O. Bowallius, A. Anand, N. Nordell, et al., Mater. Sci. Semicond. Process. 4, 209 (2001).
F. Giannazzo, L. Calcagno, F. Roccaforte, et al., Appl. Surf. Sci. 184, 183 (2001).
H. Edwards, R. McGlothlin, R. San Martin, et al., Appl. Phys. Lett. 72, 698 (1998).
M. L. O’Malley, G. L. Timp, S. V. Moccio, et al., Appl. Phys. Lett. 74, 272 (1999).
J. J. Kopanski, J. F. Marchiando, and B. G. Rennex, J. Vac. Sci. Technol. B 18, 409 (2000).
R. N. Kleiman, M. L. O’Malley, F. N. Baumann, et al., J. Vac. Sci. Technol. B 18, 2034 (2000).
G. H. Buh, H. J. Chung, C. K. Kim, et al., Appl. Phys. Lett. 77, 106 (2000).
D. M. Schaadt, E. J. Miller, E. T. Yu, and J. M. Redwing, Appl. Phys. Lett. 78, 88 (2001).
K. V. Smith, X. Z. Dang, E. T. Yu, and J. M. Redwing, J. Vac. Sci. Technol. B 18, 2304 (2000).
T. Yamamoto, Y. Suzuki, H. Sugimura, and N. Nakagiri, Jpn. J. Appl. Phys. 35, 3793 (1996).
C. J. Kang, G. H. Buh, S. Lee, et al., Appl. Phys. Lett. 74, 1815 (1999).
M. Hammar, E. Rodriguez Messmer, M. Luzuy, et al., Appl. Phys. Lett. 72, 815 (1998).
J.-K. Leong, J. McMurray, C. C. Williams, and G. B. Stringfellow, J. Vac. Sci. Technol. B 14, 3113 (1996).
J.-K. Leong, C. C. Williams, J. M. Olson, and S. Froyen, Appl. Phys. Lett. 69, 4081 (1996).
P. J. Hansen, Y. E. Strausser, A. N. Erickson, et al., Appl. Phys. Lett. 72, 2247 (1998).
H. Yamamoto, T. Takahashi, and I. Kamiya, Appl. Phys. Lett. 77, 1994 (2000).
O. Bowallius and S. Anand, Mater. Sci. Semicond. Process. 4, 81 (2001).
T. Hochwitz, A. K. Henning, Ch. Levey, et al., J. Vac. Sci. Technol. B 14, 440 (1996).
K. Kimura, K. Kobayashi, H. Yamada, and K. Matsushige, Appl. Surf. Sci. 210, 93 (2003).
Author information
Authors and Affiliations
Additional information
__________
Translated from Kristallografiya, Vol. 49, No. 3, 2004, pp. 541–565.
Original Russian Text Copyright © 2004 by Sorokina, Tolstikhina.
Rights and permissions
About this article
Cite this article
Sorokina, K.L., Tolstikhina, A.L. Atomic force microscopy modified for studying electric properties of thin films and crystals. Review. Crystallogr. Rep. 49, 476–499 (2004). https://doi.org/10.1134/1.1756648
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/1.1756648