Abstract
The effect of compositional and positional disorder on electronic properties of (Group III)-nitride solid solutions with the wurtzite structure was studied by the method of a model empirical pseudopotential using 32-atom supercells. The calculated values of the band-gap bowing parameter are found to be equal to 0.44, 2.72, and 4.16 for AlGaN, InGaN, InAlN, respectively. It is shown that the major contribution to the band-gap bowing parameter is made by the compositional disorder, whereas the bond-length relaxation reduces the effect of compositional disorder and the effects of the volume deformation.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 3, 2004, pp. 316–321.
Original Russian Text Copyright © 2004 by Voznyy, Deibuk.
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Voznyy, A.V., Deibuk, V.G. The role of alloying effects in the formation of electronic structure of unordered Group III nitride solid solutions. Semiconductors 38, 304–309 (2004). https://doi.org/10.1134/1.1682332
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DOI: https://doi.org/10.1134/1.1682332