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Electrodynamical treatment of the electron-hole long-range exchange interaction in semiconductor nanocrystals

  • Low-Dimensional Systems and Surface Physics
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Abstract

We show that the contribution to the fine structure of the ground exciton level in a semiconductor nanocrystal due to the long-range part of the electron-hole exchange interaction can be equivalently described as arising from the mechanical exciton interaction with the exciton-induced macroscopic longitudinal electric field. Particular cases of nanocrystals with cubic and wurtzite crystal lattice in the strong confinement regime are studied taking into account the complex structure of the valence band. A simplified model accounting for the exciton ground-level splitting and exploiting an effective local scalar susceptibility is established.

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Authors and Affiliations

  1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332-0250, USA

    S. V. Goupalov & D. S. Citrin

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. V. Goupalov

  3. Groupe de Physique des Solides, CNRS, UMR 7588, Université Denis Diderot and Université Pierre et Marie Curie, 75251, Paris, Cedex 05, France

    P. Lavallard

  4. Institut des Matériaux Industriels, CNRC, Boucherville, Quebec, J4B-6Y4, Canada

    G. Lamouche

Authors
  1. S. V. Goupalov
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  2. P. Lavallard
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  3. G. Lamouche
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  4. D. S. Citrin
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Additional information

From Fizika Tverdogo Tela, Vol. 45, No. 4, 2003, pp. 730–741.

Original English Text Copyright © 2003 by Goupalov, Lavallard, Lamouche, Citrin.

This article was submitted by the authors in English.

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Goupalov, S.V., Lavallard, P., Lamouche, G. et al. Electrodynamical treatment of the electron-hole long-range exchange interaction in semiconductor nanocrystals. Phys. Solid State 45, 768–781 (2003). https://doi.org/10.1134/1.1569020

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  • DOI: https://doi.org/10.1134/1.1569020

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