Abstract
The local environment of Ga, Tl, and Se atoms in InTe-based solid solutions have been studied by the method of EXAFS spectroscopy. It is shown that these atoms can be regarded as substitutional impurities occupying the In(1), In (2), and Te positions in the InTe structure. Electric measurements showed that the In1-x GaxTe and InTe1-x Sex solid solutions are semiconductors at x > 0.24 and x > 0.15, respectively.
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Translated from Kristallografiya, Vol. 45, No. 4, 2000, pp. 611–616.
Original Russian Text Copyright © 2000 by Lebedev, Michurin, Sluchinskaya, Demin, Munro.
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Lebedev, A.I., Michurin, A.V., Sluchinskaya, I.A. et al. Structure and electric properties of InTe1-x Sex,In1-x GaxTe, and In1-x Tlx Te solid solutions. Crystallogr. Rep. 45, 555–559 (2000). https://doi.org/10.1134/1.1306560
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DOI: https://doi.org/10.1134/1.1306560