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Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

The concentration of charge carriers and their Hall mobility in Si:Er/Si layers grown by sublimational molecular-beam epitaxy were investigated as functions of temperature in the range of 300–77 K. No electric activity of Er-containing luminescent centers was observed. The feasibility of precise control over impurity profiles in growing the p +-n-n + electroluminescent structures is demonstrated.

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Authors and Affiliations

  1. Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603600, Russia

    V. P. Kuznetsov & R. A. Rubtsova

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  1. V. P. Kuznetsov
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  2. R. A. Rubtsova
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 5, 2000, pp. 519–525.

Original Russian Text Copyright © 2000 by Kuznetsov, Rubtsova.

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Kuznetsov, V.P., Rubtsova, R.A. Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures. Semiconductors 34, 502–509 (2000). https://doi.org/10.1134/1.1188015

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