Skip to main content
SpringerLink
Log in

Deep level centers in silicon carbide: A review

  • Review
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Results from current studies of the parameters of deep centers in 6H-, 4H-, and 3C-SiC are analyzed. Data are presented on the ionization energy and capture cross sections of centers formed by doping SiC with different types of impurities or during irradiation, as well as of intrinsic defects. The involvement of these centers in radiative and nonradiative recombination is examined. This analysis of published data illustrates the large effect of intrinsic defects in the SiC crystal lattice both on the formation of deep centers and on the properties of the epitaxial layers themselves, such as their doping level and polytype homogeneity.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. E. G. Acheson, Chem. News 68, 179 (1893).

    Google Scholar 

  2. G. Pensl and R. Helbig, in Advances in Solid State Physics, edited by V. Rossler (Vieweg, Braunschweig, 1990).

    Google Scholar 

  3. N. J. Round, Electrical World 30, 309 (1907).

    Google Scholar 

  4. O. V. Losev, Zh. Tekh. Fiz. 1, 718 (1931).

    Google Scholar 

  5. J. A. Lely, Ber. dt. keram. Ges. 32, 229 (1955).

    Google Scholar 

  6. Yu. A. Vodakov, E. N. Mokhov, M. G. Ramm, and A. O. Roenkov, Krist and Technik 14, 729 (1979).

    Google Scholar 

  7. Yu. M. Tairov and V. F. Tsvetkov, J. Cryst. Growth 43, 209 (1978).

    Article  Google Scholar 

  8. Yu. M. Tairov and V. F. Tsvetkov, in Problemy Fiziki i Tekhnologii Shirokozonnykh Poluprovodnikov (Problems in the Physics and Technology of Wide-gap Semiconductors), Leningrad (1980), p. 122.

  9. S. Nishino, J. Powell, and N. A. Will, Appl. Phys. Lett. 42, 460 (1983).

    Article  ADS  Google Scholar 

  10. H. S. Kong, J. T. Glass, and R. F. Davis, Appl. Phys. Lett. 64, 2672 (1988).

    Google Scholar 

  11. J. A. Edmond, H. S. Kong, and C. H. Carter, Physica B 185, 453 (1993).

    Article  ADS  Google Scholar 

  12. J. W. Palmer, J. A. Edmond, H. S. Kong, and C. H. Carter, Physica B 185, 461 (1993).

    ADS  Google Scholar 

  13. B. M. Brown, M. Chezzo, J. Kretchmen, V. Krishmuthy, and G. Michon, Transactions Second Int. High Temp. Electron. Conf. (Charlotte, NC, USA, 1994) V. 1, p. XI–17.

    Google Scholar 

  14. A. R. Verma and P. Krishna, Polymorphism and Polytypism in Crystals, Wiley, N.Y. (1966).

    Google Scholar 

  15. L. S. Ramsdell, Amer. Mineral 32, 64 (1947).

    Google Scholar 

  16. L. Patric, Phys. Rev. 127, 1878 (1962).

    ADS  Google Scholar 

  17. R. G. Humphreys, D. Bimberg, and W. J. Choyke, Solid State Commun. 39, 163 (1981).

    Article  Google Scholar 

  18. G. B. Dubrovskii, Fiz. Tverd. Tela 13, 2505 (1971) [Sov. Phys. Solid State 13, 2107 (1971)].

    Google Scholar 

  19. G. B. Dubrovskii, A. A. Lepeneva, E. I. Radovanova, Phys. Status Solidi B 57, 423 (1973).

    Google Scholar 

  20. E. Bindermann, Solid State Commun. 3, 343 (1965).

    Google Scholar 

  21. G. B. Dubrovskii and E. I. Raduvanova, Fiz. Tverd. Tela 11, 680 (1969) [Sov. Phys. Solid State 11, 549 (1969)].

    Google Scholar 

  22. W. R. L. Lambrecht, S. Limpijumuong, and B. Segall, Inst. Phys. Conf. Ser. 142, 263 (1996).

    Google Scholar 

  23. W. R. L. Lambrecht and S. N. Rachkeev, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 263.

  24. L. S. Berman and A. A. Lebedev, Capacitance Spectroscopy of Deep Centers in Semiconductors [in Russian], Nauka, Leningrad (1981).

    Google Scholar 

  25. M. V. Rao, J. Gardner, O. W. Holland, G. Kelner, M. Chezzo, D. S. Simons, and P. H. Chi, Inst. Phys. Conf. Ser. 142, 521 (1996).

    Google Scholar 

  26. H. H. Woodbery and G. W. Ludwig, Phys. Rev. 124, 1083 (1961).

    ADS  Google Scholar 

  27. I. Ikeda, H. Matsunami, and T. Tanaka, Phys. Rev. B 22, 2842 (1980).

    Article  ADS  Google Scholar 

  28. A. V. Alekseenko, A. G. Zabrodskii, and M. P. Timofeev, Pis’ma Zh. Tekh. Fiz. 11, 1018 (1985) [Sov. Tech. Phys. Lett. 11, 422 (1985)].

    Google Scholar 

  29. W. Suttrop, G. Pensl, W. J. Choyke, R. Steine, and S. Leibenzeder, J. Appl. Phys. 72, 3708 (1992).

    Article  ADS  Google Scholar 

  30. W. Gotz, A. Schoner, G. Pensl, W. Suttrop, W. J. Choyke, R. Steine, and S. Leibenzeder, J. Appl. Phys. 73, 3332 (1993).

    ADS  Google Scholar 

  31. A. O. Euwarage, S. R. Smith, and W. C. Mitchel, J. Appl. Phys. 79, 7726 (1996).

    ADS  Google Scholar 

  32. Th. Troffer, W. Gotz, A. Schoner, G. Pensl, R. P. Devaty, and W. J. Choyke, Inst. Phys. Conf. Ser. 137, 173 (1994).

    Google Scholar 

  33. A. E. Nikolaev, I. P. Nikitina, and V. A. Dmitriev, Inst. Phys. Conf. Ser. 142, 125 (1996).

    Google Scholar 

  34. V. S. Vainer, V. A. Il’in, V. A. Karachinov, and Yu. M. Tairov, Fiz. Tverd. Tela 28, 363 (1986) [Sov. Phys. Solid State 28, 201 (1986)].

    Google Scholar 

  35. Yu. A. Vodakov, E. N. Kalabukhova, S. N. Lukin, A. A. Lepneva, E. N. Mokhov, and V. D. Shanina, Fiz. Tverd. Tela 20, 448 (1978) [Sov. Phys. Solid State 20, 258 (1978)].

    Google Scholar 

  36. P. J. Dean and R. L. Hartman, Phys. Rev. B 5, 4911 (1972).

    Article  ADS  Google Scholar 

  37. Van H. Daal, W. F. Knippenberg, and J. D. Wassher, J. Phys. Chem. Solids 24, 109 (1963).

    Google Scholar 

  38. G. A. Lamakina, Yu. A. Vodakov, E. N. Mokhov, V. G. Oding, and G. F. Kholuyanov, Fiz. Tverd. Tela 12, 2918 (1970) [Sov. Phys. Solid State 12, 2356 (1970)].

    Google Scholar 

  39. I. V. Kodrau and V. V. Makarov, Fiz. Tekhn. Poluprovodn. 11, 969 (1977) [Sov. Phys. Semicond. 11, 809 (1977)].

    Google Scholar 

  40. E. N. Mokhov, M. M. Usmanov, G. F. Yuldashev, and B. S. Makhmudov, Izv. AN SSSR. Neorg. mater. 20, 1383 (1984).

    Google Scholar 

  41. A. Schoner, N. Nordell, K. Rottner, R. Helbig, G. Pensl, Inst. Phys. Conf. Ser. 142, 493 (1996).

    Google Scholar 

  42. B. I. Shklovskii and A. L. Éfros, Fiz. Tekhn. Poluprovodn. 14, 486 (1980) [Sov. Phys. Semicond. 14, 351 (1980)].

    Google Scholar 

  43. M. M. Anikin, N. I. Kuznetsov, A. A. Lebedev, N. S. Savkina, A. L. Syrkin, and V. E. Chelnokov, Fiz. Tekhn. Poluprovodn. 28, 457 (1994) [Semiconductors 28, 278 (1994)].

    Google Scholar 

  44. P. A. Panov, Ya. V. Morozenko, and A. V. Suvorov, Fiz. Tekhn. Poluprovodn. 19, 1430 (1985) [Sov. Phys. Semicond. 19, 879 (1985)].

    Google Scholar 

  45. N. I. Kuznetsov and A. S. Zubrilov, Mater. Sci. Eng., B 29, 181 (1995).

    Article  Google Scholar 

  46. V. Heera, J. Pezold, X. Ning, and P. Pirouz, Inst. Phys. Conf. Ser. 142, 509 (1996).

    Google Scholar 

  47. L. L. Clemen, R. P. Devaty, W. J. Choyke, J. A. Powel, D. J. Larkin, J. A. Edmond, and A. A. Burk, Inst. Phys. Conf. Ser. 137, 297 (1994).

    Google Scholar 

  48. Yu. A. Vodakov, G. A. Lomakina, and E. N. Mokhov, Fiz. Tverd. Tela 24, 1377 (1982) [Sov. Phys. Solid State 24, 780 (1982)].

    Google Scholar 

  49. A. N. Andreev, M. M. Anikin, A. A. Lebedev, N. K. Poletaev, A. M. Strel’chuk, A. L. Surkin, and V. E. Chelnokov, Inst. Phys. Conf. Ser. 137, 271 (1994).

    Google Scholar 

  50. A. I. Veinger, Yu. A. Vodakov, Yu. Kulev, G. A. Lomakina, E. N. Mokhov, V. G. Oding, and V. I. Sokolov, Pis’ma Zh. Tekh. Fiz. 6, 1319 (1980) [Sov. Tech. Phys. Lett. 6, 566 (1980)].

    Google Scholar 

  51. V. S. Balandovich and E. N. Mokhov, Transactions Second Int. High Temp. Electron. Conf. (Charlotte NC, 5–10 USA, 1994) v. 2, p. 181.

    Google Scholar 

  52. E. É. Violin and G. F. Kholuyanov, Fiz. Tverd. Tela 8, 3395 (1966) [Sov. Phys. Solid State 8, 2716 (1966)].

    Google Scholar 

  53. S. Ortolland, C. Raynaunld, J. P. Chante, M. L. Locatelli, A. N. Andreev, A. A. Lebedev, M. G. Rastegaeva, A. L. Syrkin, N. S. Savkina, and V. E. Chelnokov, J. Appl. Phys. 80, 5464 (1996).

    Article  ADS  Google Scholar 

  54. A. A. Lebedev, A. N. Andreev, A. A. Malyshev, M. G. Restegaeva, N. S. Savkina, and V. E. Chelnokov, Fiz. Tekhn. Poluprovodn. 29, 1635 (1995) [Semiconductors 29, 1590 (1995)].

    Google Scholar 

  55. M. M. Anikin, A. A. Lebedev, A. L. Syrkin, and A. V. Suvorov, Fiz. Tekhn. Poluprovodn. 19, 114 (1985) [Sov. Phys. Semicond. 15, 69 (1985)].

    Google Scholar 

  56. W. Suttrop, G. Pensl, and P. Laning, Appl. Phys. A: Solids Surf. 51, 231 (1991).

    Google Scholar 

  57. M. M. Anikin, A. A. Lebedev, N. K. Poletaev, A. M. Strel’chuk, A. L. Surkin, and V. E. Chelnokov, Inst. Phys. Conf. Ser. 137, Chap. 6, 605 (1994).

    Google Scholar 

  58. A. A. Lebedev and N. K. Poletaev, Fiz. Tekhn. Poluprovodn. 30, 427 (1996) [Semiconductors 30, 238 (1996)].

    Google Scholar 

  59. A. O. Konstantinov, Fiz. Tekhn. Poluprovodn. 25, 1175 (1991) [Sov. Phys. Semicond. 25, 1095 (1991)].

    Google Scholar 

  60. P. G. Baranov and E. N. Mokhov, Inst. Phys. Conf. Ser. 142, 293 (1996).

    Google Scholar 

  61. T. Frank, T. Troffer, G. Pensl, N. Nordell, S. Karlson, and A. Schoner, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 348.

  62. S. Jang, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. 65, 581 (1994).

    Article  ADS  Google Scholar 

  63. M. S. Mazzola, S. E. Saddow, P. G. Neudeck, V. K. Lakdawala, and S. We, Appl. Phys. Lett. 64, 2730 (1994).

    Article  ADS  Google Scholar 

  64. Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, E. I. Radovanova, V. I. Sokolov, M. M. Usmanova, G. F. Yuldashev, and B. S. Makhmudov, Phys. Status Solidi A 35, 37 (1976).

    Google Scholar 

  65. T. Troffer, G. Pensl, A. Schoner, A. Henry, C. Hallin, O. Kordina, and E. Janzen, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 601.

  66. A. Henry, C. Hallin, I. G. Ivanov, J. P. Bergman, O. Kordina, and E. Janzen, Inst. Phys. Conf. Ser. 142, 381 (1996).

    Google Scholar 

  67. A. A. Lebedev, M. P. Shcheglov, and T. V. Sokolova, Pis’ma Zh. Tekh. Fiz. 21, 48 (1995) [Tech. Phys. Lett. 21, 51 (1995)].

    Google Scholar 

  68. Yu. A. Vodakov, G. A. Lomakkna, E. N. Mokhov, and V. G. Oding, Fiz. Tverd. Tela 33, 3315 (1991) [Sov. Phys. Solid State 33, 1869 (1991)].

    Google Scholar 

  69. E. V. Violin, A. A. Kal’nin, V. V. Pasynkov, Yu. M. Tairov, and D. A. Yas’kov, Mater. Res. Bull. 4, S231 (1969).

    Google Scholar 

  70. Y. Zheng, N. Ramungul, R. Patel, V. Khemka, and T. P. Chow, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 71.

  71. P. G. Baranov and E. N. Mokhov, Fiz. Tverd. Tela 38, 1446 (1996) [Phys. Solid State 38, 798 (1996)].

    Google Scholar 

  72. A. Hofstaeffer, B. K. Mayer, A. Scharmann, P. G. Baranov, I. V. Liyn, and E. N. Mokhov, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997) p. 294.

  73. M. B. Scott, J. D. Scofield, Y. K. Yeo, and R. L. Hengehold, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 389.

  74. V. S. Ballandovich, Fiz. Tekhn. Poluprovodn. 25, 287 (1991) [Semiconductors 25, 152 (1991)].

    Google Scholar 

  75. H. Vakhner and Yu. M. Tairov, Fiz. Tverd. Tela 11, 2440 (1969) [Sov. Phys. Solid State 11, 1972 (1969)].

    Google Scholar 

  76. D. P. Litvin, A. A. Mal’tsev, A. V. Naumov, A. D. Roenkov, and V. I. Sankin, Pis’ma Zh. Tekh. Fiz. 13, 1247 (1987) [Sov. Tech. Phys. Lett. 13, 523 (1987)].

    Google Scholar 

  77. L. Patrick and W. J. Choyke, Phys. Rev. B 10, 5091 (1974).

    Article  ADS  Google Scholar 

  78. A. W. C. Kemenade and S. H. Hagen, Solid State Commun. 14, 1331 (1974).

    Google Scholar 

  79. K. M. Lee, Le. Si. Dang, G. B. Watkins, and W. J. Choyke, Phys. Rev. B 32, 2273 (1985).

    ADS  Google Scholar 

  80. K. Maier, H. D. Muller, and J. Schneider, Mater. Sci. Forum 83–87, 1183 (1992).

    Google Scholar 

  81. K. Maier, J. Schneider, W. Wilkening, S. Leibenzeder, and R. Steine, Mater. Sci. Eng., B 11, 27 (1992).

    Article  Google Scholar 

  82. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schoner, and N. Nordel, Phys. Status Solidi A 162, 199 (1997).

    ADS  Google Scholar 

  83. T. Dalibor, G. Pensl, N. Nordel, A. Schoner, and W. J. Choyke, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 55.

  84. J. M. Langer and H. Heinrich, Phys. Rev. Lett. 55, 1414 (1985).

    Article  ADS  Google Scholar 

  85. H. McD. Hobgood, R. C. Glass, A. Augustine, R. H. Hopkins, J. Jenny, M. Skowronski, W. C. Mitchel, and M. Roth, Appl. Phys. Lett. 66, 1364 (1995).

    Article  ADS  Google Scholar 

  86. W. C. Mitchel, M. D. Roth, A. O. Evwaraye, P. W. Yu, S. R. Smith, J. Jenny, M. Skowronski, H. McD. Hodgood, R. C. Glass, G. Augustine, and R. H. Hopkins, Inst. Phys. Conf. Ser. 142, 313 (1996).

    Google Scholar 

  87. K. F. Dombrovskii, U. Kaufman, and M. Hunzer, Appl. Phys. Lett. 65, 184 (1994).

    Google Scholar 

  88. J. Schneider, H. D. Muller, K. Maier, W. Wilkening, F. Fuchs, A. Dornen, S. Leibenzader, and S. Steine, Appl. Phys. Lett. 56, 1184 (1990).

    ADS  Google Scholar 

  89. N. Achtziger, J. Grillenberg, and W. Witthuhn, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 597.

  90. St. G. Muller, D. Hofmann, A. Winnacker, E. N. Mokhov, and Yu. A. Bodakov, Inst. Phys. Conf. Ser. 142, 361 (1996).

    Google Scholar 

  91. Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, M. G. Ramm, and V. I. Sokolov, Fiz. Tekh. Poluprovodn. 20, 2153 (1986) [Sov. Phys. Semicond. 20, 1347 (1986)].

    Google Scholar 

  92. N. Achtziger and W. Witthunh, Mater. Sci. Eng., B 46, 333 (1997).

    Article  Google Scholar 

  93. M. Kuznser, K. F. Dombrovski, F. Fuchs, U. Kaufmann, J. Schneider, P. G. Baranov, and E. N. Mokhov, Inst. Phys. Conf. Ser. 142, 385 (1996).

    Google Scholar 

  94. M. Feege, S. Grenlich-Weber, and J.-M. Spaeth, Semicond. Sci. Technol. 8, 1620 (1993).

    Article  ADS  Google Scholar 

  95. K. Abe, T. Ohsima, H. Iton, Y. Aoki, M. Yoshikawa, I. Nashiyama, and M. Iwami, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 354.

  96. G. F. Kholuyanov, Yu. A. Vodakov, and É. V. Violin, Fiz. Tekh. Poluprovodn. 5, 39 (1971) [Sov. Phys. Semicond. 5, 141 (1971)].

    Google Scholar 

  97. T. Dalibor, G. Pensl, T. Yamamoto, T. Kimoto, H. Matsunami, S. Sridhara, D. C. Nizher, R. P. Devaty, and W. J. Choyke, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 599.

  98. D. Alok, B. J. Baliga, M. Kothandaraman, and P. K. McLarty, Inst. Phys. Conf. Ser. 142, 565 (1996).

    Google Scholar 

  99. H. Ennen, J. Schnider, G. Pomrenke, and A. Axmann, Appl. Phys. Lett. 43, 943 (1983).

    Article  ADS  Google Scholar 

  100. W. J. Choyke, R. P. Devaty, L. L. Clemen, M. Yoganathan, G. Pensl, and Ch. Hassler, Appl. Phys. Lett. 65, 1668 (1994).

    Article  ADS  Google Scholar 

  101. K. Awahara and M. Kumagai, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 380.

  102. M. M. Anikin, A. A. Lebedev, I. V. Popov, A. L. Syrkin, A. V. Suvorov, and G. P. Shpynev, in Technology of Semiconductor Power Devices [in Russian], Valgus, Tallin (1987), p. 19.

    Google Scholar 

  103. N. I. Kuznetsov, A. P. Dmitrov, and A. S. Furman, Fiz. Tekh. Poluprovodn. 28, 1010 (1994) [Semiconductors 28, 584 (1994)].

    Google Scholar 

  104. A. A. Lebedev, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 67.

  105. N. I. Kuznetsov and J. A. Edmond, Fiz. Tekh. Poluprovodn. 31, 1220 (1997) [Sov. Phys. Semicond. 31, 1481 (1997)].

    Google Scholar 

  106. M. M. Anikin, A. A. Lebedev, A. L. Syrkin, and A. V. Suvorov, Fiz. Tekh. Poluprovodn. 20, 2169 (1986) [Sov. Phys. Semicond. 20, 1357 (1986)].

    Google Scholar 

  107. M. M. Anikin, A. A. Lebedev, I. V. Popov, A. M. Strel’chuk, A. L. Syrkin, A. V. Suvorov, and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. 20, 1654 (1986) [Sov. Phys. Semicond. 20, 1036 (1986)].

    Google Scholar 

  108. A. A. Lebedev, Author’s abstract of Candidate’s Dissertation (Physicotechnical Institute, Leningrad, 1991).

  109. A. A. Lebedev and V. E. Chelnokov, Diamond films and Related Mater. 3, 1393 (1994).

    Google Scholar 

  110. M. M. Anikin, N. I. Kuznetsov, A. A. Lebedev, N. K. Poletaev, A. M. Strel’chuk, A. L. Syrkin, A. V. Suvorov, and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. 28, 443 (1994) [Semiconductors 28, 609 (1994)].

    Google Scholar 

  111. C. T. Sah, L. Forbes, L. L. Rossier, and A. F. Tasch, Solid-State Electron. 13, 759 (1970).

    Google Scholar 

  112. A. G. Kechek, N. I. Kuznetsov, and A. A. Lebedev, Fiz. Tekh. Poluprovodn. 21, 2228 (1987) [Sov. Phys. Semicond. 21, 1351 (1987)].

    Google Scholar 

  113. E. N. Kolabukova, S. N. Lukin, E. N. Mokhov, J. Reinke, S. Greulich-Weber, and J.-M. Spaeth, Inst. Phys. Conf. Ser. 142, 333 (1996).

    Google Scholar 

  114. G. C. Rubicki, J. Appl. Phys. 78, 2996 (1995).

    ADS  Google Scholar 

  115. M. M. Anikin, A. N. Andreev, A. A. Lebedev, S. N. Pyatko, M. G. Rasetegaeva, N. S. Savkina, A. M. Strelchuk, A. L. Syrkin, and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. 25, 328 (1991) [Sov. Phys. Semicond. 25, 409 (1991)].

    Google Scholar 

  116. M. M. Anikin, A. S. Zubrilov, A. A. Lebedev, A. M. Strel’chuk, and A. E. Cherenkov, Fiz. Tekh. Poluprovodn. 25, 479 (1991) [Sov. Phys. Semicond. 25, 519 (1991)].

    Google Scholar 

  117. M. M. Anikin, A. A. Lebedev, A. L. Syrkin, A. V. Suvorov, and A. M. Strel’chuk, Ext. Abstracts Electrochem. Soc. Mtg., 708 (1989).

  118. H. Zhang, G. Pensl, A. Dorner, and S. Leibenzeder, Ext. Abstr. Electrochem. Soc. Mtg., 699 (1989).

  119. J. P. Doyle, M. O. Adoelfotoh, B. G. Svensson, A. Schoner, and N. Nordel, Diamond Relat. Mater., 1388 (1997).

  120. A. I. Vainer, V. A. Il’in, Yu. M. Tairov, and V. F. Tsvetkov, Fiz. Tekh. Poluprovodn. 15, 1557 (1981) [Sov. Phys. Semicond. 15, 902 (1981)].

    Google Scholar 

  121. M. M. Anikin, A. A. Lebedev, I. V. Popov, V. P. Rastegaev, A. M. Strel’chuk, A. L. Syrkin, Yu. Tairov, V. F. Tsvetkov, and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. 22, 298 (1988) [Sov. Phys. Semicond. 22, 181 (1988)].

    Google Scholar 

  122. N. T. Son, E. Sorman, W. M. Chen, O. Kordina, B. Monemar, and E. Janzen, Appl. Phys. Lett. 65, 2687 (1994).

    ADS  Google Scholar 

  123. T. Troffer, Ch. Habler, G. Pensl, K. Holzlein, H. Mitlehner, and J. Volki, Inst. Phys. Conf. Ser. 142, 281 (1996).

    Google Scholar 

  124. T. Dalibor, G. Pensl, T. Kimoto, H. Matsunami, S. Shidhara, P. P. Devaty, and W. J. Choyke, Diamond Relat. Mater. 6, 1333 (1997).

    Google Scholar 

  125. A. A. Lebedev, A. N. Andreev, M. M. Anikin, M. G. Rastegaeva, N. S. Savkina, A. M. Strelchuk, A. L. Syrkin, A. S. Tregubova, and V. E. Chelnokov, Proc. ISPSD’95 (Yokohama, Japan, 1995), p. 90.

  126. P. Zhou, M. G. Spencer, G. L. Harris, and K. Fekade, Appl. Phys. Lett. 50, 1384 (1987).

    Article  ADS  Google Scholar 

  127. K. Zakentes, M. Kayiambaki, and G. Constantinidis, Appl. Phys. 66, 3015 (1995).

    ADS  Google Scholar 

  128. V. S. Balandovich and G. N. Violina, Cryst. Lattice Defects Amorphous Mater. 13, 189 (1987).

    Google Scholar 

  129. H. Zhang, G. Pensl, P. Glasow, and S. Leibenzeder, Ext. Abstracts Electrochem. Soc. Mtg., 714 (1989).

  130. C. Hemmingson, N. T. Son, O. Kordina, E. Janzen, J. L. Lindstrom, S. Savarge, and N. Nordel, Mater. Sci. Eng., B 46, 336 (1997).

    Google Scholar 

  131. I. M. Pavlov, M. I. Iglitsin, M. G. Kosganov, and V. N. Solomatin, Fiz. Tekh. Poluprovodn. 9, 1279 (1975) [Sov. Phys. Semicond. 9, 1320 (1975)].

    Google Scholar 

  132. A. I. Veigner, A. A. Lepeneva, G. A. Lomakina, E. N. Mokhov, and V. I. Sokolov, Fiz. Tekh. Poluprovodn. 18, 2014 (1984) [Sov. Phys. Semicond. 18, 1932 (1984)].

    Google Scholar 

  133. V. V. Evstropov, A. M. Strel’chuk, A. L. Syrkin, and V. E. Chelnokov, Inst. Phys. Conf. Ser. 137, 589 (1994).

    Google Scholar 

  134. M. Okada, T. Kimura, T. Nakata, M. Watanbe, S. Kanazava, I. Kanno, K. Kamitani, K. Atobe, and M. N. Nakagawa, Inst. Phys. Conf. Ser. 142, 469 (1996).

    Google Scholar 

  135. H. Matsunami and T. Kimoto, Mater. Sci. Eng., R. 20, 125 (1997).

    Article  Google Scholar 

  136. Yu. A. Vodakov, G. A. Lomakina, and E. N. Mokhov, Fiz. Tverd. Tela 24, 1377 (1982) [Sov. Phys. Solid State 24, 780 (1982)].

    Google Scholar 

  137. Yu. Vakhner and Yu. M. Tairov, Fiz. Tverd. Tela 12, 1543 (1970) [Sov. Phys. Solid State 12, 1213 (1970)].

    Google Scholar 

  138. Yu. A. Vodakov, E. N. Mokhov, A. D. Roenkov, and M. M. Anikin, Pis’ma Zh. Tekh. Fiz. 5, 367 (1979) [Sov. Tech. Phys. Lett. 5, 147 (1979)].

    Google Scholar 

  139. A. A. Maltsev, A. Yu. Maksimov, and N. K. Yushin, Inst. Phys. Conf. Ser. 142, 41 (1996).

    Google Scholar 

  140. A. A. Maltsev, D. P. Litvin, M. P. Scheglov, and I. P. Nikitina, Inst. Phys. Conf. Ser. 142, 137 (1996).

    Google Scholar 

  141. P. A. Ivanov, A. A. Maltsev, V. N. Panteleev, T. P. Samsonova, A. Yu. Maksimov, N. K. Yushin, and V. E. Chelnokov, Inst. Phys. Conf. Ser. 142, 757 (1996).

    Google Scholar 

  142. Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, and V. G. Oding, Fiz. Tverd. Tela 19, 1812 (1977) [Sov. Phys. Solid State 18, 1695 (1977)].

    Google Scholar 

  143. A. N. Andreev, A. S. Tregubova, M. P. Scheglov, A. L. Syrkin, and V. E. Chelnokov, Mater. Sci. Eng., B 46, 141 (1997).

    Article  Google Scholar 

  144. A. A. Lebedev, N. S. Savkina, A. M. Strel’chuk, A. S. Tregubova, and M. P. Scheglov, Mater. Sci. Eng., B 46, 168 (1997).

    Google Scholar 

  145. A. A. Lebedev, N. S. Savkina, A. S. Tregubova, and M. P. Shcheglov, Fiz. Tekh. Poluprovodn. 31, 1083 (1997) [Semiconductors 31, 906 (1997)].

    Google Scholar 

  146. A. A. Lebedev, Abstracts of the 19th International Conference Def. in Semicond. (Aveiro, Portugal, 1997), p. 239.

  147. Yu. A. Vodakov and E. N. Mokhov, Inst. Phys. Conf. Ser. 137, 197 (1994).

    Google Scholar 

  148. N. D. Sorokin, Yu. M. Tairov, V. F. Tsvetkov, and M. A. Chernov, Kristallografiya 28, 910 (1983).

    Google Scholar 

  149. G. Zeinther and D. Theeis, IEEE Trans. Electron Devices ED-28, 425 (1981).

    ADS  Google Scholar 

  150. D. J. Larkin, P. G. Neudeck, J. A. Powell, and L. G. Matus, Appl. Phys. Lett. 65, 1661 (1994).

    Article  ADS  Google Scholar 

  151. E. Janzen and O. Kordina, Inst. Phys. Conf. Ser. 142, 653 (1996).

    Google Scholar 

  152. A. N. Andreev, N. Yu. Smirnova, M. P. Shcheglov, M. G. Rastegaeva, V. P. Restagaev, and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. 30, 2060 (1996) [Semiconductors 30, 1074 (1996)].

    Google Scholar 

  153. L. Hoffman, G. Zeigler, D. Theeis, and G. Wegnich, J. Appl. Phys. 53, 6962 (1982).

    Article  ADS  Google Scholar 

  154. V. M. Gusev, K. D. Demakov, V. M. Efimov, V. N. Ionov, M. G. Kosagonova, N. K. Prokof’ev, V. G. Stolyarova, and Yu. N. Chekushkin, Fiz. Tekh. Poluprovodn. 15, 2430 (1981) [Sov. Phys. Semicond. 15, 1413 (1981)].

    Google Scholar 

  155. R. M. Potter, Mater. Res. Bull. 4, S223 (1969).

    Google Scholar 

  156. A. Bergh and P. Dean, Proc. IEEE 60, 156 (1972).

    Google Scholar 

  157. M. M. Anikin, N. I. Kuznetsov, A. A. Lebedev, A. M. Strel’chuk, and A. L. Syrkin, Fiz. Tekh. Poluprovodn. 24, 1384 (1990) [Sov. Phys. Semicond. 24, 1281 (1990)].

    Google Scholar 

  158. A. N. Andreev, M. M. Anikin, A. A. Lebedev, N. K. Poletaev, A. M. Strel’chuk, A. L. Syrkin, and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. 28, 729 (1994) [Semiconductors 28, 430 (1994)].

    Google Scholar 

  159. A. A. Lebedev, Fiz. Tekh. Poluprovodn. 30, 999 (1996) [Semiconductors 30, 531 (1996)].

    Google Scholar 

  160. V. I. Pavlichenko, I. V. Ryzhikov, Yu. M. Suleimanov, and Yu. M. Shaidak, Fiz. Tverd. Tela 10, 2801 (1968) [Sov. Phys. Solid State 10, 2205 (1968)].

    Google Scholar 

  161. S. H. Hagen, A. W. C. Kemanage, and van der Does de Bye, J. Lumin. 8, 18 (1973).

    Google Scholar 

  162. A. Suzuki, H. Matsunami, and T. Tanaka, J. Electrochem. Soc. 124, 241 (1977).

    Google Scholar 

  163. V. I. Sokolov, in Problems in the Physics and Technology of Wide Gap Semiconductors [in Russian], Leningrad (1979), p. 301.

  164. W. von Munch and W. Kukzinger, Solid-State Electron. 21, 1129 (1978).

    Google Scholar 

  165. M. Ikeda, T. Haykawa, S. Yamagiva, H. Matsunami, and T. Tanaka, J. Appl. Phys. 50, 8215 (1979).

    ADS  Google Scholar 

  166. V. A. Dmitriev, P. A. Ivanov, Ya. V. Morozenko, I. V. Popov, and V. E. Chelnokov, Pis’ma Zh. Tekh. Fiz. 11, 246 (1985) [Sov. Tech. Phys. Lett. 11, 101 (1985)].

    Google Scholar 

  167. L. Hoffman, G. Zeidler, D. Theis, and G. Wegnich, J. Appl. Phys. 53, 6962 (1982).

    Article  ADS  Google Scholar 

  168. V. I. Vishnevskaya, V. A. Dmitriev, I. D. Kovalenko, L. M. Kogan, Ya. V. Morozenko, V. S. Rodkin, A. L. Syrkin, B. V. Tsarenkov, and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. 22, 664 (1988) [Sov. Phys. Semicond. 22, 414 (1988)].

    Google Scholar 

  169. A. A. Lebedev, N. K. Poletaev, M. G. Rastegaeva, and A. M. Strel’chuk, Fiz. Tekh. Poluprovodn. 28, 1769 (1994) [Semiconductors 28, 981 (1994)].

    Google Scholar 

  170. V. V. Makarov and N. N. Petrov, Fiz. Tverd. Tela 8, 1602 (1966) [Sov. Phys. Solid State 8, 1272 (1966)].

    Google Scholar 

  171. V. V. Makarov, Fiz. Tverd. Tela 9, 596 (1967) [Sov. Phys. Solid State 9, 457 (1967)].

    Google Scholar 

  172. N. V. Kodrau and V. V. Makarov, Fiz. Tekh. Poluprovodn. 15, 1408 (1981) [Sov. Phys. Semicond. 15, 813 (1981)].

    Google Scholar 

  173. L. Patrick and W. J. Choyke, Phys. Rev. B 5, 3253 (1972).

    ADS  Google Scholar 

  174. V. V. Makarov and N. N. Petrov, Fiz. Tverd. Tela 8, 3393 (1966) [Sov. Phys. Solid State 8, 2714 (1966)].

    Google Scholar 

  175. V. V. Makarov, Fiz. Tverd. Tela 13, 2357 (1971) [Sov. Phys. Solid State 13, 1974 (1971)].

    Google Scholar 

  176. V. M. Gusev, K. D. Demakov, V. M. Efimov, V. I. Ionov, M. G. Kosagonova, N. K. Prokof’eva, V. G. Stolyarova, and Yu. N. Chekushkin, Fiz. Tekh. Poluprovodn. 15, 2430 (1981) [Sov. Phys. Semicond. 15, 1413 (1981)].

    Google Scholar 

  177. Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, M. G. Ramm, and V. I. Sokolov, Fiz. Tekh. Poluprovodn. 20, 2153 (1986) [Sov. Phys. Semicond. 20, 1347 (1986)].

    Google Scholar 

  178. Yu. M. Suleimanov, A. M. Grekhov, and V. M. Grekhov, Fiz. Tverd. Tela 25, 1840 (1983) [Sov. Phys. Solid State 25, 1060 (1983)].

    Google Scholar 

  179. Yu. A. Vodakov, A. I. Girka, A. O. Konstantinov, E. N. Mokhov, A. D. Roenkov, S. V. Svirida, V. V. Semenov, V. I. Sokolov, and A. V. Shishkin, Fiz. Tekh. Poluprovodn. 26, 1857 (1992) Semiconductors 26, 1041 (1992)].

    Google Scholar 

  180. Yu. A. Vodakov, A. A. Vol’fson, G. V. Zaritskii, E. N. Mokhov, A. G. Ostroumov, A. D. Roenkov, V. V. Semenov, V. I. Sokolov, and V. E. Udal’tsov, Fiz. Tekh. Poluprovodn. 26, 107 (1992) [Sov. Phys. Semicond. 26, 59 (1992)].

    Google Scholar 

  181. W. J. Choyke, in NATO ASI Ser. Physics and Chemistry of Carbides, Nitrides and Borides, edited by R. Freer (Manchester, 1989).

  182. A. A. Lebedev, M. P. Shcheglov, and T. V. Sokolova, Pis’ma Zh. Tekh. Fiz. 21, 48 (1995) [Tech. Phys. Lett. 21, 61 (1995)].

    Google Scholar 

  183. H. Kuwabara and S. Yamata, Phys. Status Solidi A 30, 739 (1975).

    Google Scholar 

  184. S. E. Saddow, C. W. Tripton, and M. S. Mazzola, J. Appl. Phys. 77, 318 (1994).

    ADS  Google Scholar 

  185. H. Matsunami, M. Ikeda, and T. Tanaka, Jpn. J. Appl. Phys. 19, 1323 (1980).

    Google Scholar 

  186. M. M. Anikin, A. A. Lebedev, N. K. Poletaev, A. M. Strel’chuk, A. L. Syrkin, and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. 28, 473 (1994) [Semiconductors 28, 288 (1994)].

    Google Scholar 

  187. A. A. Lebedev and M. C. do Carmo, Mater. Sci. Eng., B 46, 275 (1997).

    Google Scholar 

  188. A. V. Naumov and V. I. Sankin, Fiz. Tekh. Poluprovodn. 23, 1009 (1989) [Sov. Phys. Semiconductors 23, 630 (1989)].

    Google Scholar 

  189. V. I. Sankin, R. G. Verenchikova, Yu. A. Vodakov, M. G. Ramm, and A. D. Roenkov, Fiz. Tekh. Poluprovodn. 16, 1325 (1983) [Sov. Phys. Semicond. 16, 839 (1983)].

    Google Scholar 

  190. V. S. Balandovich and G. N. Violina, Fiz. Tekh. Poluprovodn. 15, 1650 (1981) [Sov. Phys. Semicond. 15, 959 (1981)].

    Google Scholar 

  191. M. M. Anikin, A. A. Lebedev, S. N. Pyatko, V. A. Soloviev, and A. M. Strel’chuk, Springer Proc. Phys. 56, 269 (1992).

    Google Scholar 

  192. A. M. Strel’chuk, Fiz. Tekh. Poluprovodn. 29, 1190 (1995) [Sov. Phys. Semicond. 29, 850 (1995)].

    Google Scholar 

  193. A. M. Strel’chuk and V. V. Evstropov, Inst. Phys. Conf. Ser. 155, 1009 (1997).

    Google Scholar 

  194. O. Kordina, J. P. Bergman, A. Henry, and E. Janzen, Appl. Phys. Lett. 66, 189 (1995).

    ADS  Google Scholar 

  195. J. P. Bergman, C. Hallin, and E. Janzen, Abstracts Int. Conf. on SiC, III Nitrides and Related Materials (Stockholm, Sweden, 1997), p. 63.

  196. A. A. Lebedev and D. V. Davydov, Fiz. Tekh. Poluprovodn. 31, 1049 (1997) [Sov. Phys. Semicond. 31, 935 (1997)].

    Google Scholar 

  197. A. O. Konstantinov, D. P. Litvin, and V. I. Sankin, Pis’ma Zh. Tekh. Fiz. 7, 1335 (1981) [Sov. Tech. Phys. Lett. 7, 572 (1981)].

    Google Scholar 

  198. Yu. A. Vodakov, A. O. Konstantinov, D. P. Litvin, and V. I. Sankin, Pis’ma Zh. Tekh. Fiz. 7, 705 (1981) [Sov. Tech. Phys. Lett. 7, 301 (1981)].

    Google Scholar 

  199. A. P. Dmitriev, A. O. Konstantinov, D. P. Litvin, and V. I. Sankin, Fiz. Tekh. Poluprovodn. 17, 1093 (1983) [Sov. Phys. Semicond. 17, 686 (1983)].

    Google Scholar 

  200. M. M. Anikin, S. M. Vainshtein, A. M. Strel’chuk, and A. L. Syrkin, Fiz. Tekh. Poluprovodn. 22, 545 (1988) [Sov. Phys. Semicond. 22, 307 (1988)].

    Google Scholar 

  201. M. M. Anikin, M. E. Levinshtein, I. V. Popov, V. P. Rastegaev, A. M. Strel’chuk, and A. L. Syrkin, Fiz. Tekh. Poluprovodn. 22, 1574 (1988) [Sov. Phys. Semicond. 22, 995 (1988)].

    Google Scholar 

  202. A. S. Kyuregyan and P. N. Shlygin, Fiz. Tekh. Poluprovodn. 23, 1164 (1989) [Sov. Phys. Semicond. 23, 729 (1989)].

    Google Scholar 

  203. E. V. Astrova, V. M. Volle, V. B. Voronkov, V. A. Kozlov, and A. A. Lebedev, Fiz. Tekh. Poluprovodn. 20, 2122 (1986) [Sov. Phys. Semicond. 20, 1326 (1986)].

    Google Scholar 

  204. P. G. Neudeck and Ch. Fazi, IEEE Electron Device Lett. 18, 96 (1997).

    Article  Google Scholar 

  205. A. A. Lebedev, A. M. Strel’chuk, S. Ortolland, C. Raynaud, M. L. Locatelli, D. Planson, and J. P. Chante, Inst. Phys. Conf. Ser. 142, 701 (1996).

    Google Scholar 

  206. A. A. Lebedev, S. Ortoland, C. Raynaud, M. L. Locatelli, D. Planson, and J. P. Chante, Fiz. Tekh. Poluprovodn. 31, 866 (1997) [Sov. Phys. Semicond. 31, 735 (1997)].

    Google Scholar 

  207. R. N. Kyutt, A. A. Lepeneva, G. A. Lomakina, E. N. Mokhov, A. S. Tregubova, and G. F. Yuldashev, Fiz. Tverd. Tela 30, 2606 (1988) [Sov. Phys. Solid State 30, 1500 (1988)].

    Google Scholar 

  208. A. I. Girka, V. A. Kuleshin, A. D. Mokrushin, E. N. Mokhov, S. V. Svirida, and A. V. Shishkin, Fiz. Tekh. Poluprovodn. 23, 1270 (1989) [Sov. Phys. Semicond. 23, 790 (1989)].

    Google Scholar 

  209. V. A. Il’in and B. S. Balandovich, Defect Diffus. Forum 103–105 (Trans, Tech. publ., Switzerland, 1993), p. 633.

Download references

Author information

Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. A. Lebedev

Authors
  1. A. A. Lebedev
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Fiz. Tekh. Poluprovodn. 33, 129–155 (February 1998)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lebedev, A.A. Deep level centers in silicon carbide: A review. Semiconductors 33, 107–130 (1999). https://doi.org/10.1134/1.1187657

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1187657

Keywords

Search

Navigation