P-type oxide-based thin film transistors produced at low temperatures

R. Martins; V. Figueiredo; R. Barros; P. Barquinha; G. Gonçalves; L. Pereira; I. Ferreira; E. Fortunato

doi:10.1117/12.907387

2 March 2012 P-type oxide-based thin film transistors produced at low temperatures

R. Martins, V. Figueiredo, R. Barros, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, E. Fortunato

Proceedings Volume 8263, Oxide-based Materials and Devices III; 826315 (2012) https://doi.org/10.1117/12.907387
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

P-type thin-film transistors (TFTs) using room temperature sputtered tin and copper oxide as a transparent oxide semiconductor have been produced on rigid and paper substrates. The SnO_x films shows p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal β-Sn and α-SnO_x phases, after annealing at 200 °C. These films exhibit a hole carrier concentration in the range of ≈ 10¹⁶-10¹⁸ cm^-3, electrical resistivity between 101-102 Ωcm, Hall mobility of 4.8 cm²/Vs, optical band gap of 2.8 eV and average transmittance ≈ 85 % (400 to 2000 nm). Concerning copper oxide Cu_xO thin films they exhibit a polycrystalline structure with a strongest orientation along (111) plane. The Cu_xO films produced between an oxygen partial pressure of 9 to 75% showed p-type behavior, as it was measured by Hall effect and Seebeck measurements. The bottom gate p-type SnO_x TFTs present field-effect mobility above 1.24 cm²/Vs (including the paper p-type oxide TFT) and an on/off modulation ratio of 10³ while the Cu_xO TFTs exhibit a field-effect mobility of 1.3×10^-3 cm²/Vs and an on/off ratio of 2×10².

Citation Download Citation

R. Martins, V. Figueiredo, R. Barros, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, and E. Fortunato "P-type oxide-based thin film transistors produced at low temperatures", Proc. SPIE 8263, Oxide-based Materials and Devices III, 826315 (2 March 2012); https://doi.org/10.1117/12.907387

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