Repairing 45 nm node defects through nano-machining

Roy White; Andrew Dinsdale; Tod Robinson; David Brinkley; Jeffrey Csuy; David Lee

doi:10.1117/12.748668

30 October 2007 Repairing 45 nm node defects through nano-machining

Roy White, Andrew Dinsdale, Tod Robinson, David Brinkley, Jeffrey Csuy, David Lee

Proceedings Volume 6730, Photomask Technology 2007; 673021 (2007) https://doi.org/10.1117/12.748668
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

Recently questions have been raised about whether high aspect ratio (HAR) NanoBits^TM can be effectively utilized to repair extension defects in 45 nm node and beyond. The primary concern has been how the effect of NanoBit^TM deflection impacts edge placement, sidewall angle and z-depth control repeatability. Higher aspect ratio bits are required for defects that arise as mask feature sizes become smaller. As the aspect ratio of the NanoBit^TM continues to increase to meet these demands, the cross sectional area of the bit used for nanomachining becomes thinner and more susceptible to bending under the forces applied during the nanomachining process. This is especially true when deeper features that require HAR NanoBits^TM are being repaired. To overcome this trend RAVE LLC has developed a new repair process that utilizes the strength of the bit shape. Repair of 45 nm node defects that require HAR NanoBits^TM will be demonstrated using a new repair process and cantilever design.

Citation Download Citation

Roy White, Andrew Dinsdale, Tod Robinson, David Brinkley, Jeffrey Csuy, and David Lee "Repairing 45 nm node defects through nano-machining", Proc. SPIE 6730, Photomask Technology 2007, 673021 (30 October 2007); https://doi.org/10.1117/12.748668

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