Paper
24 July 2002 High resolution negative i-line resist and process for metal lift-off applications
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Abstract
A newly developed, high resolution negative i-line resist product family, is introduced in this paper. Variation in resist film absorption provides optimum inverted sidewall slopes adequate for most metal lift-off applications. Resist resolution below 0.3micrometers is demonstrated. The capability of further resolution enhancement with the use of a simple shrink process is also demonstrated.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Medhat A. Toukhy, Salem K. Mullen, Ping-Hung Lu, and Mark Neisser "High resolution negative i-line resist and process for metal lift-off applications", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474287
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Cited by 3 scholarly publications.
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KEYWORDS
Absorption

Photoresist processing

Metals

Polymers

Image processing

Resolution enhancement technologies

Semiconducting wafers

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