Presentation
9 March 2024 Ultrafast carrier dynamics and insights in defect mechanism of p-type colloidal ZnO QDs
Author Affiliations +
Abstract
In this study, we place a strong emphasis on understanding the ultrafast dynamics of carrier recombination pathways in p-type ZnO, especially in the midgap region. Synthesizing and controlling the properties of p-type ZnO remains a pivotal yet challenging task for numerous optoelectronic and spintronic applications due to intrinsic midgap (defect) states. Through an advanced sol-gel process, we have successfully produced ZnO quantum dots (QD), eliminating unreacted molecules that decrease the excitonic emission. This refined method supports the generation of ZnO with p-type characteristics, primarily attributed to zinc vacancies in oxygen-rich scenarios. Notably, our analysis across timescales from femtoseconds to microseconds unveiled carrier lifetimes at room temperature, and associated long-lasting carriers with zinc vacancy defects, corroborating the p-type nature of our synthesized ZnO QDs.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Abdullah Kahraman, Etienne Socie, Maryam Nazari Haghighi Pashaki, Elisa Biasin, Merve Buldu Akturk, Victoria Kabanova, Grigory Smolentsev, Daniel Grolimund, Jacques E. Moser, Emre Erdem, Andrea Cannizzo, Camila Bacellar, and Christopher Milne "Ultrafast carrier dynamics and insights in defect mechanism of p-type colloidal ZnO QDs", Proc. SPIE PC12884, Ultrafast Phenomena and Nanophotonics XXVIII, PC128840B (9 March 2024); https://doi.org/10.1117/12.3014669
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KEYWORDS
Carrier dynamics

Zinc oxide

Ultrafast phenomena

Spectroscopy

Photoluminescence

Picosecond phenomena

Quantum dot emission

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