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9 March 2024 GaN and AlGaN epitaxy by HVPE
Hajime Fujikura, Taichiro Konno, Shota Kaneki
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288605 (2024) https://doi.org/10.1117/12.3000105
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
High-speed growth (>1um/min) of highly-pure homo-epitaxial GaN layers ([C], [O] < mid-1e14/cm3) suitable for a drift layer of vertical-type power device became possible by using a quartz-free HVPE. This highly pure GaN crystal exhibited a record high room temperature and low temperature electron mobilities of 1480 and 14,300 cm2/Vs, respectively. Difficulty in alloy composition control of AlGaN crystals in HVPE-method due to parasitic vapor phase reaction was suppressed by careful adjustment of the growth conditions. As a result, AlGaN layers with good surface and crystal qualities were successfully prepared within almost the entire Al-fraction range by the HVPE method.
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Hajime Fujikura, Taichiro Konno, and Shota Kaneki "GaN and AlGaN epitaxy by HVPE", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288605 (9 March 2024); https://doi.org/10.1117/12.3000105
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KEYWORDS
Aluminum gallium nitride
Gallium nitride
Epitaxy
Crystals
Vapor phase epitaxy
Carbon
Cladding
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