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The study showed three main effects: (i) the decrease in the sub-threshold optical power, which shows two different slopes, that we ascribe to the regions where A, Shockley-Read-Hall (SRH) recombination coefficient, and B, radiative coefficient, dominate. (ii) a logarithmic decrease during the stress time of the characteristic temperature T0. (iii) the presence of a parasitic peak, with energy close to the main emission peak. This peak is ascribed to recombination in a second quantum well with slightly different energy, due to the different internal field. The intensity of this excited emission decreases during stress time, possibly due to a change in the injection efficiency. We have also found an initial increase in the optical power at very low current levels, followed by a decrease with increasing stress time. This behavior is ascribed to an initial annealing, that favors the activation of magnesium, followed by an increment of the density of defects in the material caused by the stress. |
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Quantum wells
Semiconductor lasers
Temperature metrology
Magnesium
Annealing
Light emitting diodes
High power lasers
