On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process

Sangyoon Han; Dae-Gon Kim; Joonhyuk Hwang; In Hwan Do; Dongin Jeong; Yong-Hee Lee; Duk-Yong Choi; Hansuek Lee

doi:10.1117/12.2544063

2 March 2020 On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process

Sangyoon Han, Dae-Gon Kim, Joonhyuk Hwang, In Hwan Do, Dongin Jeong, Yong-Hee Lee, Duk-Yong Choi, Hansuek Lee

Proceedings Volume 11266, Laser Resonators, Microresonators, and Beam Control XXII; 112660P (2020) https://doi.org/10.1117/12.2544063
Event: SPIE LASE, 2020, San Francisco, California, United States

Abstract

We present a new device platform which defines on-chip chalcogenide waveguide/resonators without directly etching chalcogenide. Using our platform, we have demonstrated chalcogenide ring resonators with record high Q-factor exceeding 1.1x10⁷ which is 10 times larger than previous record on on-chip chalcogenide resonators. A ring cavity is designed and fabricated for Stimulated Brillouin lasing on our platform. Thanks to the high-Q factor, Brillouin lasing with threshold power of 1 mW is demonstrated. This value is more than an order of magnitude improvement than previous world record for on-chip chalcogenide Brillouin lasers. We also developed an efficient and flexible method for resonator waveguide coupling with our device platform. Coupling between a resonator and a waveguide can be varied from under coupled region to over-coupled region.

Conference Presentation

Citation Download Citation

Sangyoon Han, Dae-Gon Kim, Joonhyuk Hwang, In Hwan Do, Dongin Jeong, Yong-Hee Lee, Duk-Yong Choi, and Hansuek Lee "On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process", Proc. SPIE 11266, Laser Resonators, Microresonators, and Beam Control XXII, 112660P (2 March 2020); https://doi.org/10.1117/12.2544063

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