In this paper, we will discuss some of the approaches that we have investigated to define the best etch process adjustments to enable EUV patterning. RF pulsing is one of the key parameters utilized to overcome most of the previously described challenges, and has also been coupled with stack optimization. This study will focus on RF pulsing (high vs. low frequency results) and bias control (RF frequency dependence). In particular, pulsing effects on resist morphology, selectivity and profile management will be reported, as well as the role of aspect ratio and etch chemistry on organic mask wiggling and collapse. This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities. |
ACCESS THE FULL ARTICLE
No SPIE Account? Create one
CITATIONS
Cited by 2 scholarly publications.
Etching
Line edge roughness
Optical lithography
Extreme ultraviolet
Plasma
Line width roughness
Plasma etching