Production of low-cost large-area CdZnTe films by metalorganic chemical vapor deposition (MOCVD) on GaAs and Si substrates

Nasser H. Karam; F. T. J. Smith; Rengarajan Sudharsanan; A. Mastrovito; James T. Daly; Michael M. Sanfacon; M. Leonard; N. A. El-Masry

doi:10.1117/12.179651

13 July 1994 Production of low-cost large-area CdZnTe films by metal-organic chemical vapor deposition (MOCVD) on GaAs and Si substrates

Nasser H. Karam, F. T. J. Smith, Rengarajan Sudharsanan, A. Mastrovito, James T. Daly, Michael M. Sanfacon, M. Leonard, N. A. El-Masry

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Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179651
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

This paper reports the deposition of (100) GaAs and (111)B CdZnTe layers on silicon substrates up to 4-inch diameter to produce substrates suitable for liquid phase epitaxy (LPE) of high-quality HgCdTe layers. Metalorganic chemical vapor deposition is used for both GaAs and CdZnTe in a reactor capable of deposition onto eighteen 3-inch or ten 4-inch wafers per run. An encapsulation scheme is described that prevents contamination of a Te melt by Si or GaAs during LPE growth. Excellent uniformity of thickness and Zn concentration are achieved in the MOCVD films. The CdZnTe films show only lamellar twins close to the GaAs interface; no twins capable of propagating into the HgCdTe layer are formed. These substrates have been used for the growth of pure HgCdTe films having a dislocation density that is only a factor of 2 to 4 higher than that measured in similar films grown on bulk CdTe substrates.

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Nasser H. Karam, F. T. J. Smith, Rengarajan Sudharsanan, A. Mastrovito, James T. Daly, Michael M. Sanfacon, M. Leonard, and N. A. El-Masry "Production of low-cost large-area CdZnTe films by metal-organic chemical vapor deposition (MOCVD) on GaAs and Si substrates", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179651

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KEYWORDS

Metalorganic chemical vapor deposition

Gallium arsenide

Silicon

Liquid phase epitaxy

Mercury cadmium telluride

Contamination

Interfaces

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