Paper
2 March 1993 Characterization of Si3N4/SiO2 optical channel waveguides by photon scanning tunneling microscopy
Yan Wang, Mona H. Chudgar, Howard E. Jackson, Jeffrey S. Miller, Gregory N. De Brabander, Joseph T. Boyd
Author Affiliations +
Abstract
Photon scanning tunneling microscopy (PSTM) is used to characterize Si3N4/Si02 optical channel waveguides being used for integrated optical-micromechanical sensors. PSTM utilizes an optical fiber tapered to a fine point which is piezoelectrically positioned to measure the decay of the evanescent field intensity associated with the waveguide propagating mode. Evanescent field decays are recorded for both ridge channel waveguides and planar waveguide regions. Values for the local effective refractive index are calculated from the data for both polarizations and compared to model calculations.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan Wang, Mona H. Chudgar, Howard E. Jackson, Jeffrey S. Miller, Gregory N. De Brabander, and Joseph T. Boyd "Characterization of Si3N4/SiO2 optical channel waveguides by photon scanning tunneling microscopy", Proc. SPIE 1793, Integrated Optics and Microstructures, (2 March 1993); https://doi.org/10.1117/12.141222
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Channel waveguides

Waveguides

Planar waveguides

Refractive index

Channel projecting optics

Integrated optics

Photonic microstructures

Back to Top