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By the use of synchrotron radiation at Stanford, the integrated reflection intensities were measured on 222, 
and 
reflections from a GaAs single-crystal plate in the energy region very near the Ga K absorption edge. The energy dependence of the intensities agreed reasonably with the corresponding calculated curves.
and 
reflections from a GaAs single-crystal plate in the energy region very near the Ga K absorption edge. The energy dependence of the intensities agreed reasonably with the corresponding calculated curves.
