Phys. Rev. Lett. 96, 055501 (2006) - Divacancy in 4H-SiC

Divacancy in 4H-SiC

N. T. Son, P. Carlsson, J. ul Hassan, E. Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, and H. Itoh

Phys. Rev. Lett. 96, 055501 – Published 6 February 2006; Erratum Phys. Rev. Lett. 96, 069902 (2006)

Abstract

Electron paramagnetic resonance and ab initio supercell calculations suggest that the $P 6 / P 7$ centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground states of the neutral divacancy. The spin density is found to be located mainly on three nearest C neighbors of the silicon vacancy, whereas it is negligible on the nearest Si neighbors of the carbon vacancy.

Received 22 July 2005
Corrected 7 February 2006

DOI:https://doi.org/10.1103/PhysRevLett.96.055501

©2006 American Physical Society

Corrections

7 February 2006

Erratum

Publisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett. 96, 055501 (2006)]

N. T. Son, P. Carlsson, J. ul Hassan, E. Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, and H. Itoh

Phys. Rev. Lett. 96, 069902 (2006)

Authors & Affiliations

N. T. Son, P. Carlsson, J. ul Hassan, and E. Janzén

Department of Physic, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden

T. Umeda and J. Isoya

Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba 305-8550, Japan

Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary

Universität Erlangen-Nürnberg, D-91058, Erlangen, Germany, and Universidad del País Vasco, E-20018, San Sebastián, Spain

N. Morishita, T. Ohshima, and H. Itoh

Japan Atomic Energy Research Institute, Takasaki 370-1292, Japan

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Issue

Vol. 96, Iss. 5 — 10 February 2006

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