Quantization of the Diagonal Resistance: Density Gradients and the Empirical Resistance Rule in a 2D System

W. Pan, J. S. Xia, H. L. Stormer, D. C. Tsui, C. L. Vicente, E. D. Adams, N. S. Sullivan, L. N. Pfeiffer, K. W. Baldwin, and K. W. West
Phys. Rev. Lett. 95, 066808 – Published 5 August 2005

Abstract

We have observed quantization of the diagonal resistance, Rxx, at the edges of several quantum Hall states. Each quantized Rxx value is close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, Rxy. Peaks in Rxx occur at different positions in positive and negative magnetic fields. Practically all Rxx features can be explained quantitatively by a 1%/cm electron density gradient. Therefore, Rxx is determined by Rxy and unrelated to the diagonal resistivity ρxx. Our findings throw an unexpected light on the empirical resistivity rule for 2D systems.

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  • Received 20 April 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.066808

©2005 American Physical Society

Authors & Affiliations

W. Pan1,2,3, J. S. Xia3,4, H. L. Stormer5,6, D. C. Tsui2, C. L. Vicente3,4, E. D. Adams3,4, N. S. Sullivan3,4, L. N. Pfeiffer6, K. W. Baldwin6, and K. W. West6

  • 1Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  • 2Princeton University, New Jersey 08544, USA
  • 3National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
  • 4University of Florida, Gainesville, Florida 32611, USA
  • 5Columbia University, New York, New York 10027, USA
  • 6Bell Labs, Lucent Technologies, Murray Hill, New Jersey 07954, USA

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Vol. 95, Iss. 6 — 5 August 2005

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