We have fabricated electron Y-branch switches (YBS) on modulation doped $\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ heterostructures. The Y branch consists of a one-dimensional source, which is split along the branching section into two one-dimensional drains. In addition to source drain voltages, external electric fields can be applied via gates along the branches.In the nonlinear transport regime sweeps of the side-gate voltages lead to a voltage difference between the drain reservoirs with gain. This switching gain increases superlinearly with the bias voltage applied between the source and the drains of the YBS. We explain the bias voltage enhanced switching by a capacitive coupling of the branches.

• Received 15 July 2002

DOI:https://doi.org/10.1103/PhysRevLett.89.226804