Signatures of Carrier-Wave Rabi Flopping in GaAs

O. D. Mücke, T. Tritschler, M. Wegener, U. Morgner, and F. X. Kärtner
Phys. Rev. Lett. 87, 057401 – Published 12 July 2001
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Abstract

For excitation of the model semiconductor GaAs with optical pulses which are both extremely short ( 5fs) and extremely intense ( 1012Wcm2), we can meet the condition that the Rabi frequency becomes comparable to the band gap frequency—a highly unusual and previously inaccessible situation. Specifically, in this regime, we observe carrier-wave Rabi flopping, a novel effect of nonlinear optics which has been predicted theoretically and which is related to the failure of the area theorem.

  • Received 13 February 2001

DOI:https://doi.org/10.1103/PhysRevLett.87.057401

©2001 American Physical Society

Authors & Affiliations

O. D. Mücke, T. Tritschler, and M. Wegener

  • Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Straße 1, 76131 Karlsruhe, Germany

U. Morgner and F. X. Kärtner

  • Institut für Hochfrequenztechnik und Quantenelektronik, Universität Karlsruhe(TH), Engesserstraße 5, 76131, Karlsruhe, Germany

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Vol. 87, Iss. 5 — 30 July 2001

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