GaAs under Intense Ultrafast Excitation: Response of the Dielectric Function

Li Huang, J. Paul Callan, Eli N. Glezer, and Eric Mazur
Phys. Rev. Lett. 80, 185 – Published 5 January 1998
PDFExport Citation

Abstract

We used a new broadband spectroscopic technique to measure the dielectric function of GaAs over the spectral range of 1.5–3.5 eV following intense 70-fs laser excitation. The results provide the most detailed information thus far on the electron and lattice dynamics both above and below the fluence threshold for permanent damage, Fth=1.0kJ/m2. There are three distinct regimes of behavior: lattice heating (<0.5Fth), lattice disordering (0.6–0.8) Fth, and a semiconductor-to-metal transition (>0.8Fth). Below Fth, the changes are completely reversible.

  • Received 21 May 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.185

©1998 American Physical Society

Authors & Affiliations

Li Huang, J. Paul Callan, Eli N. Glezer, and Eric Mazur

  • Department of Physics and Division of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138

References (Subscription Required)

Click to Expand
Issue

Vol. 80, Iss. 1 — 5 January 1998

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×