Chemical Potential Shift in Overdoped and Underdoped La2xSrxCuO4

A. Ino, T. Mizokawa, A. Fujimori, K. Tamasaku, H. Eisaki, S. Uchida, T. Kimura, T. Sasagawa, and K. Kishio
Phys. Rev. Lett. 79, 2101 – Published 15 September 1997
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Abstract

The downward shift of the electron chemical potential μ with hole doping in La2xSrxCuO4 has been deduced from the shifts of photoemission and inverse-photoemission spectra. While the shift is large ( 1.5 eV/hole) in overdoped samples, it is suppressed ( <0.2 eV/hole) in underdoped samples, implying a divergent charge susceptibility near the metal-insulator transition. In the overdoped regime, the μ and the electronic specific heat coefficient γ are consistently explained within Fermi-liquid theory, whereas the same analysis gives unphysical results in the underdoped regime, indicating the breakdown of the Fermi-liquid picture in the underdoped regime.

  • Received 6 January 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.2101

©1997 American Physical Society

Authors & Affiliations

A. Ino, T. Mizokawa, and A. Fujimori

  • Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113, Japan

K. Tamasaku, H. Eisaki, S. Uchida, T. Kimura, T. Sasagawa, and K. Kishio

  • Department of Superconductivity, University of Tokyo, Bunkyo-ku, Tokyo 113, Japan

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Vol. 79, Iss. 11 — 15 September 1997

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